Metal film resistor max voltage - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
APT30M40B2VFRG- ND	APT30M40B2VFRG	Microsemi Corporation	View more Series: POWER MOS V Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25C: 76A (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	1+: $0
APT94N65B2C6-ND	APT94N65B2C6	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 35 mOhm @ 35.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3.5mA Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8140pF @ 25V FET Feature: Super Junction Power Dissipation (Max): 833W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	30+: $13.4045
APT50M65B2LLG-N D	APT50M65B2LLG	Microsemi Corporation	View more Series: POWER MOS 7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65 mOhm @ 33.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 7010pF @ 25V Power Dissipation (Max): 694W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	4 Order	1+: $19.4796
APT41M80B2-ND	APT41M80B2	Microsemi Corporation	View more Series: POWER MOS 8 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 210 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 8070pF @ 25V Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	60+: $11.3745
APT84M50B2-ND	APT84M50B2	Microsemi Corporation	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65 mOhm @ 42A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V Power Dissipation (Max): 1135W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	1+: $0
APT31M100B2-ND	APT31M100B2	Microsemi Corporation	View more Series: POWER MOS 8 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	1+: $0
APT48M80B2-ND	APT48M80B2	Microsemi Corporation	View more Series: POWER MOS 8 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 9330pF @ 25V Power Dissipation (Max): 1135W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	30+: $12.789
APT75F50B2-ND	APT75F50B2	Microsemi Corporation	View more Series: POWER MOS 8 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75 mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 11600pF @ 25V Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	--
APT60M75L2LLG-N D	APT60M75L2LLG	Microsemi Corporation	View more Series: POWER MOS 7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75 mOhm @ 36.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V Power Dissipation (Max): 893W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: 264 MAX [L2] Package / Case: TO-264-3, TO-264AA	1000 Order	1+: $0
APT94N60L2C3G-N D	APT94N60L2C3G	Microsemi Corporation	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 35 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V Power Dissipation (Max): 833W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: 264 MAX [L2] Package / Case: TO-264-3, TO-264AA	20 Order	--
APT28M120B2-ND	APT28M120B2	Microsemi Corporation	View more Series: POWER MOS 8 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V Power Dissipation (Max): 1135W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	1+: $16.6005 30+: $14.108 120+: $13.1122
APT56F50B2-ND	APT56F50B2	Microsemi Corporation	View more Series: POWER MOS 8 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V Power Dissipation (Max): 780W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	41 Order	1+: $10.2438 30+: $8.6129 120+: $7.9146
APT12067B2LLG-N D	APT12067B2LLG	Microsemi Corporation	View more Series: POWER MOS 7 Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 670 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 25V Power Dissipation (Max): 565W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	1+: $0
APT66F60B2-ND	APT66F60B2	Microsemi Corporation	View more Series: POWER MOS 8 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 13190pF @ 25V Power Dissipation (Max): 1135W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	19 Order	1+: $15.1641
APT56F60B2-ND	APT56F60B2	Microsemi Corporation	View more Series: POWER MOS 8 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110 mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	1+: $0
APT75M50B2-ND	APT75M50B2	Microsemi Corporation	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75 mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 11600pF @ 25V Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX Package / Case: TO-247-3 Variant	1000 Order	1+: $0
APT20M22B2VFRG- ND	APT20M22B2VFRG	Microsemi Corporation	View more Series: POWER MOS V Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V Power Dissipation (Max): 520W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	1+: $0
APT22F120B2-ND	APT22F120B2	Microsemi Corporation	View more Series: POWER MOS 8 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 700 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 8370pF @ 25V Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	1+: $0
APT34N80B2C3G-N D	APT34N80B2C3G	Microsemi Corporation	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 145 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 355nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4510pF @ 25V Power Dissipation (Max): 417W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	38 Order	--
APT10M11B2VFRG- ND	APT10M11B2VFRG	Microsemi Corporation	View more Series: POWER MOS V Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Power Dissipation (Max): 520W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX Package / Case: TO-247-3 Variant	1000 Order	1+: $0
APT94N65B2C3G-N D	APT94N65B2C3G	Microsemi Corporation	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 35 mOhm @ 47A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5.8mA Gate Charge (Qg) (Max) @ Vgs: 580nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 13940pF @ 25V Power Dissipation (Max): 833W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	--
APT29F100B2-ND	APT29F100B2	Microsemi Corporation	View more Series: POWER MOS 8 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 440 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	1+: $14.5971 30+: $12.2768 120+: $11.2814
APT43M60B2-ND	APT43M60B2	Microsemi Corporation	View more Series: POWER MOS 8 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 8590pF @ 25V Power Dissipation (Max): 780W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	60+: $8.2438
APT37M100B2-ND	APT37M100B2	Microsemi Corporation	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 330 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V Power Dissipation (Max): 1135W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	30 Order	1+: $15.6051 30+: $13.2663 120+: $12.3299
APT66M60B2-ND	APT66M60B2	Microsemi Corporation	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 13190pF @ 25V Power Dissipation (Max): 1135W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	--
APT10045B2LLG-N D	APT10045B2LLG	Microsemi Corporation	View more Series: POWER MOS 7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450 mOhm @ 11.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V Power Dissipation (Max): 565W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	1+: $0
APT44F80B2-ND	APT44F80B2	Microsemi Corporation	View more Series: POWER MOS 8 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 210 mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 9330pF @ 25V Power Dissipation (Max): 1135W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1 Order	1+: $15.8004
APT8024B2LLG-ND	APT8024B2LLG	Microsemi Corporation	View more Series: POWER MOS 7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 240 mOhm @ 15.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V Power Dissipation (Max): 565W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	9 Order	1+: $18.5661
APT38F80B2-ND	APT38F80B2	Microsemi Corporation	View more Series: POWER MOS 8 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 240 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 8070pF @ 25V Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	30+: $11.9351
APT12057B2LLG-N D	APT12057B2LLG	Microsemi Corporation	View more Series: POWER MOS 7 Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 570 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V Power Dissipation (Max): 690W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3	1000 Order	30+: $22.2865
APT5010B2FLLG-N D	APT5010B2FLLG	Microsemi Corporation	View more Series: POWER MOS 7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 25V Power Dissipation (Max): 520W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	24 Order	1+: $13.3623 30+: $11.2377 120+: $10.3267
APT43F60B2-ND	APT43F60B2	Microsemi Corporation	View more Series: POWER MOS 8 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 8590pF @ 25V Power Dissipation (Max): 780W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	1+: $0
APT10035B2LLG-N D	APT10035B2LLG	Microsemi Corporation	View more Series: POWER MOS 7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V Power Dissipation (Max): 690W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	--
APT60M75L2FLLG- ND	APT60M75L2FLLG	Microsemi Corporation	View more Series: POWER MOS 7 Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75 mOhm @ 36.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V Power Dissipation (Max): 893W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: 264 MAX [L2] Package / Case: TO-264-3, TO-264AA	1000 Order	25+: $28.3298
APT50M65B2FLLG- ND	APT50M65B2FLLG	Microsemi Corporation	View more Series: POWER MOS 7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65 mOhm @ 33.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 7010pF @ 25V Power Dissipation (Max): 694W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	30+: $16.897
APT106N60B2C6-N D	APT106N60B2C6	Microsemi Corporation	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 106A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 35 mOhm @ 53A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3.4mA Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8390pF @ 25V Power Dissipation (Max): 833W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	92 Order	1+: $12.7638 30+: $10.732 120+: $9.8618
APT20M22B2VRG-N D	APT20M22B2VRG	Microsemi Corporation	View more Series: POWER MOS V Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V Power Dissipation (Max): 520W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	1+: $0
APT34F100B2-ND	APT34F100B2	Microsemi Corporation	View more Series: POWER MOS 8 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V Power Dissipation (Max): 1135W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	30+: $13.9698
APT5010B2LLG-ND	APT5010B2LLG	Microsemi Corporation	View more Series: POWER MOS 7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 25V Power Dissipation (Max): 520W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	60+: $11.0053
APT84F50B2-ND	APT84F50B2	Microsemi Corporation	View more Series: POWER MOS 8 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65 mOhm @ 42A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V Power Dissipation (Max): 1135W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	1+: $0

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