APT5010B2LLG Allicdata Electronics
Allicdata Part #:

APT5010B2LLG-ND

Manufacturer Part#:

APT5010B2LLG

Price: $ 12.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 500V 46A T-MAX
More Detail: N-Channel 500V 46A (Tc) 520W (Tc) Through Hole T-M...
DataSheet: APT5010B2LLG datasheetAPT5010B2LLG Datasheet/PDF
Quantity: 1000
60 +: $ 11.00530
Stock 1000Can Ship Immediately
$ 12.11
Specifications
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Series: POWER MOS 7®
Rds On (Max) @ Id, Vgs: 100 mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The APT5010B2LLG MOSFET is a single-pole, N-channel enhancement-mode power field-effect transistor (FET). It is mainly used to switch loads, control power in DC and motor control applications, as well as providing power to other components in a design. This MOSFET is able to handle high currents due to its low threshold voltage.

The APT5010B2LLG MOSFET is a type of N-channel power MOSFET. It has been designed with a low threshold voltage (VGS) of 0.8V, which makes it suitable for use in high current, low voltage applications. The MOSFETs major practical advantages are the low on resistance and low switching thresholds. These two characteristics make it suitable for use in many DC power applications such as power regulators, automotive, and DC/DC converters.

The APT5010B2LLG is designed for power management applications. It has an on-resistance of 2.1Ω, a maximum drain current of 8A, and a maximum drain-source voltage of 55V. Its low off-resistance, low gate-source threshold voltage, and low on-resistance are advantageous for designs that require higher efficiency and output currents. This MOSFET is also low in EMI due to its low Threshold Voltage.

The power MOSFET is a three terminal device with the terminals Gate (G), Drain (D), and Source (S). Applying a voltage between the gate and the source makes the MOSFET conduct current from the drain to the source. When a voltage is applied between the drain and the source (VDS) and a positive voltage between the gate and source (VGS) the device is turned on and current can flow from drain to source. The current flow from drain to the source is controlled by the voltage between the gate and the source. Increasing the voltage between Gate and Source will increase the current between the drain and the source. Conversely, when the voltage is removed between Gate and Source, current will not flow.

The APT5010B2LLG is also well-suited for switching applications thanks to its fast switching speed. This MOSFET can switch at frequencies up to 500 kHz, allowing it to switch rapidly with minimal switching loss. It is also suitable for use in power conversion applications, such as DC/DC converters, due to its low threshold voltage.

The APT5010B2LLG is an ideal choice for low voltage, high current applications due to its low threshold voltage, low on-resistance, and fast switching speed. Its low power consumption and low EMI makes it especially suitable for automotive applications. Furthermore, its high current handling capability and low cost make it well suited for low cost power management designs. This makes it an excellent choice for a wide range of power management applications.

The specific data is subject to PDF, and the above content is for reference

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