APT75F50B2

Vgs(th) (Max) @ Id:	5V @ 2.5mA
Package / Case:	TO-247-3 Variant
Supplier Device Package:	T-MAX™ [B2]
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1040W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	11600pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	290nC @ 10V
Series:	POWER MOS 8™
Rds On (Max) @ Id, Vgs:	75 mOhm @ 37A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction
APT75F50B2 is one of the most advanced, cost-effective and versatile transistor devices on the market today. It is a low voltage N-Channel, Enhancement Mode, Drain-Source , Metal Oxide Semiconductor field effect transistor (MOSFET). It is designed to operate in the voltage range of 2.5V to 5V and offers a very high current carrying capacity of up to 75A. It is also capable of providing a high switching frequency and higher efficiency when compared to other low voltage transistors.Application Fields
APT75F50B2 is primarily used in power electronic designs. It can be used in developing Linear DC-DC, Buck Boost Converters, Buck Chopper, DC-AC Inverters and in Electronic Load Control. It is often used in low voltage switching applications, high power DC-AC Inverters, DC-DC converters, battery chargers, motor drives, solar inverters, motor controls, AC motor drives and more. Its high current carrying capacity makes it suitable for high power applications such as electric vehicles and home automation.Advantages
APT75F50B2 provides numerous advantages when used in power electronic designs. It is a very low voltage rated and high current rated transistor, so it is capable of providing high current switchings over a wide voltage range. Furthermore, it offers lower leakage current, higher switching frequency and efficiency with minimal power consumption. With its high current capacity, it is also ideal for high voltage applications, thus making it a suitable choice for electric vehicles, motor applications, and other power-intensive applications.Working principle
APT75F50B2 is an enhancement mode MOSFET which operates when in its active state. It consists of three electrodes, the source, gate and drain, which are connected to the power supply. When a positive voltage is applied to the gate, it causes the MOSFET to become active and allows current to flows from the source to the drain. Conversely, when the voltage applied to the gate is negative, the MOSFET is in its non-active or OFF state, thus preventing current from flowing. The advantages of using an enhancement-mode MOSFET is that it draws negligible current from the gate compared to the other MOSFETs, thus making it suitable for low power applications. Furthermore, its low on-resistance and high current capacity make it well-suited for high power applications as well.Conclusion
APT75F50B2 is a versatile and cost- effective MOSFET which is suitable for a wide variety of low and high power applications. It is capable of providing high current carrying capacity, lower leakage current and higher switching frequency with minimal power consumption. Furthermore, its enhancement-mode makes it suitable for low power applications. Apart from its numerous advantages, it is also quite simple to use, thus making it an ideal choice for electrical engineers.

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