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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
PDTC143ZK,115-N D	PDTC143ZK,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250A, 5mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: DTC143	1000 Order	1+: $0
PDTA124EK,115-N D	PDTA124EK,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: PDTA124	1000 Order	1+: $0
PDTC124EK,115-N D	PDTC124EK,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: PDTC124	1000 Order	1+: $0
PDTC115EK,115-N D	PDTC115EK,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: PDTC115	1000 Order	1+: $0
PDTB113ES,126-N D	PDTB113ES,126	NXP USA Inc	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: PDTB113	1000 Order	1+: $0
PDTC143ES,126-N D	PDTC143ES,126	NXP USA Inc	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: DTC143	1000 Order	1+: $0
PDTB113ZS,126-N D	PDTB113ZS,126	NXP USA Inc	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: PDTB113	1000 Order	1+: $0
568-11226-2-ND	PDTA114EE,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 180MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75 Base Part Number: PDTA114	1000 Order	1+: $0
PDTD113ES,126-N D	PDTD113ES,126	NXP USA Inc	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: PDTD113	1000 Order	1+: $0
PDTC143EK,115-N D	PDTC143EK,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: DTC143	1000 Order	1+: $0
PDTD123ES,126-N D	PDTD123ES,126	NXP USA Inc	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: PDTD123	1000 Order	1+: $0
PDTC124ES,126-N D	PDTC124ES,126	NXP USA Inc	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: PDTC124	1000 Order	1+: $0
PDTC114EK,115-N D	PDTC114EK,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: PDTC114	1000 Order	1+: $0
568-8090-2-ND	PDTC114EE,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Frequency - Transition: 230MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75 Base Part Number: PDTC114	1000 Order	1+: $0
PDTC114ES,126-N D	PDTC114ES,126	NXP USA Inc	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: PDTC114	1000 Order	1+: $0
PDTA143XK,115-N D	PDTA143XK,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: PDTA143	1000 Order	1+: $0
568-2107-2-ND	PDTA115EK,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: PDTA115	1000 Order	1+: $0
PDTC144WS,126-N D	PDTC144WS,126	NXP USA Inc	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: PDTC144	1000 Order	1+: $0
PDTC114EK,135-N D	PDTC114EK,135	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: PDTC114	1000 Order	1+: $0
PDTA124XK,115-N D	PDTA124XK,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: PDTA124	1000 Order	1+: $0
PDTA144EK,135-N D	PDTA144EK,135	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: PDTA144	1000 Order	1+: $0
PDTA143EK,115-N D	PDTA143EK,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: PDTA143	1000 Order	1+: $0
PDTD113ZS,126-N D	PDTD113ZS,126	NXP USA Inc	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: PDTD113	1000 Order	1+: $0
PDTA144WK,115-N D	PDTA144WK,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: PDTA144	1000 Order	1+: $0
PDTA123EK,115-N D	PDTA123EK,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: PDTA123	1000 Order	1+: $0
PDTC144ES,126-N D	PDTC144ES,126	NXP USA Inc	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: PDTC144	1000 Order	1+: $0
PDTA123JK,115-N D	PDTA123JK,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250A, 5mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: PDTA123	1000 Order	1+: $0
PDTD113EK,115-N D	PDTD113EK,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: PDTD113	1000 Order	1+: $0
PDTC123EK,115-N D	PDTC123EK,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: PDTC123	1000 Order	1+: $0
PDTA143ZK,115-N D	PDTA143ZK,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250A, 5mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: PDTA143	1000 Order	1+: $0
PDTB123ES,126-N D	PDTB123ES,126	NXP USA Inc	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: PDTB123	1000 Order	1+: $0
PDTA144ES,126-N D	PDTA144ES,126	NXP USA Inc	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: PDTA144	1000 Order	1+: $0
PDTC144WK,115-N D	PDTC144WK,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA Current - Collector Cutoff (Max): 1A Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Base Part Number: PDTC144	1000 Order	1+: $0
RN1119MFVL3F-ND	RN1119MFV,L3F	Toshiba Semiconductor and Storage	View more Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	1000 Order	8000+: $0.0183
RN2111MFVL3F-ND	RN2111MFV,L3F	Toshiba Semiconductor and Storage	View more Part Status: Active Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	1000 Order	8000+: $0.0198
RN1111MFVL3F-ND	RN1111MFV,L3F	Toshiba Semiconductor and Storage	View more Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	1000 Order	8000+: $0.0183
RN2110MFVL3F-ND	RN2110MFV,L3F	Toshiba Semiconductor and Storage	View more Part Status: Active Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	1000 Order	8000+: $0.0198
RN1132MFVL3F-ND	RN1132MFV,L3F	Toshiba Semiconductor and Storage	View more Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 200 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	1000 Order	8000+: $0.0183
RN1113MFVL3F-ND	RN1113MFV,L3F	Toshiba Semiconductor and Storage	View more Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	1000 Order	8000+: $0.0183
DTA143EEBHZGTLT R-ND	DTA143EEBHZGTL	ROHM Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: EMT3F (SOT-416FL)	3000 Order	3000+: $0.0236

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