Allicdata Part #: | PDTC124ES,126-ND |
Manufacturer Part#: |
PDTC124ES,126 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PREBIAS NPN 500MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC124ES,126 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 500mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | PDTC124 |
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The PDTC124ES and PDTC126 are two types of pre-biased single bipolar transistors manufactured by NXP ® Semiconductors. They are high-speed, high-current NPN transistors ideal for switching and amplifier applications. Both the PDTC124ES and PDTC126 have similar packaging, application fields and working principles.
Packaging
The PDTC124ES and PDTC126 are offered in a through-hole package that is designed to enable easy mounting on printed circuit boards (PCBs). Both devices come in a TO-92 package, which contains three solderable pins and measures 3 mm x 3 mm. The TO-92 package is a popular, easy-to-use standard package that simplifies the design and assembly of electronic components in the electronics industry.
Application Field
The PDTC124ES and PDTC126 are suitable for a variety of applications, from motor control and automotive lighting to portable device charging and industrial automation. Both devices feature a low saturation voltage of 0.2 V, allowing for fast switching and low power consumption. The PDTC124ES also features a breakdown voltage of 40 V. The PDTC126 includes all the features of the PDTC124ES, but with a higher breakdown voltage of 60 V.
Working Principle
The PDTC124ES and PDTC126 are based on NXP ® Semiconductors\' vertical PNP technology. This technology enables the devices to have high-speed switching and amplifying capabilities by utilizing the vertical PNP\'s low-saturation voltage and high breakdown voltage. In order to achieve optimal results in these fields, the device must be biased correctly. Biasing allows for a higher current operating range as well as a lower operating temperature.
Conclusion
The PDTC124ES and PDTC126 are both high-speed, high-current NPN transistors that are ideal for switching and amplifier applications. They come in a popular TO-92 package that is designed to enable easy mounting on PCBs. The devices feature a low saturation voltage, allowing for fast switching, and a high breakdown voltage, allowing for higher current operating range and lower operating temperature.
The specific data is subject to PDF, and the above content is for reference
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