PDTC124ES,126 Allicdata Electronics
Allicdata Part #:

PDTC124ES,126-ND

Manufacturer Part#:

PDTC124ES,126

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS NPN 500MW TO92-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC124ES,126 datasheetPDTC124ES,126 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 500mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: PDTC124
Description

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The PDTC124ES and PDTC126 are two types of pre-biased single bipolar transistors manufactured by NXP ® Semiconductors. They are high-speed, high-current NPN transistors ideal for switching and amplifier applications. Both the PDTC124ES and PDTC126 have similar packaging, application fields and working principles.

Packaging

The PDTC124ES and PDTC126 are offered in a through-hole package that is designed to enable easy mounting on printed circuit boards (PCBs). Both devices come in a TO-92 package, which contains three solderable pins and measures 3 mm x 3 mm. The TO-92 package is a popular, easy-to-use standard package that simplifies the design and assembly of electronic components in the electronics industry.

Application Field

The PDTC124ES and PDTC126 are suitable for a variety of applications, from motor control and automotive lighting to portable device charging and industrial automation. Both devices feature a low saturation voltage of 0.2 V, allowing for fast switching and low power consumption. The PDTC124ES also features a breakdown voltage of 40 V. The PDTC126 includes all the features of the PDTC124ES, but with a higher breakdown voltage of 60 V.

Working Principle

The PDTC124ES and PDTC126 are based on NXP ® Semiconductors\' vertical PNP technology. This technology enables the devices to have high-speed switching and amplifying capabilities by utilizing the vertical PNP\'s low-saturation voltage and high breakdown voltage. In order to achieve optimal results in these fields, the device must be biased correctly. Biasing allows for a higher current operating range as well as a lower operating temperature.

Conclusion

The PDTC124ES and PDTC126 are both high-speed, high-current NPN transistors that are ideal for switching and amplifier applications. They come in a popular TO-92 package that is designed to enable easy mounting on PCBs. The devices feature a low saturation voltage, allowing for fast switching, and a high breakdown voltage, allowing for higher current operating range and lower operating temperature.

The specific data is subject to PDF, and the above content is for reference

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