PDTC115EK,115 Allicdata Electronics
Allicdata Part #:

PDTC115EK,115-ND

Manufacturer Part#:

PDTC115EK,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS NPN 250MW SMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC115EK,115 datasheetPDTC115EK,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3; MPAK
Base Part Number: PDTC115
Description

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The PDTC115EK is a single, pre-biased, bipolar junction transistor (BJT). It is a popular choice among electronics professionals and hobbyists alike due to its wide range of applications and its relative ease of use. This article will discuss the applications of the PDTC115EK, as well as its working principle.

Applications

The PDTC115EK can be used in a wide variety of applications. These applications include power switching, voltage amplification, voltage regulation, and current flow control. It is particularly well-suited for use in audio amplifiers, motor drives, and digital logic circuits. Due to its broad range of uses, the PDTC115EK is a popular choice among electronics professionals and hobbyists alike.

The PDTC115EK is also a good choice for applications requiring a high level of precision. It has a low thermal resistance and can be used in optimal conditions over a wide temperature range. In addition, it has a low voltage drop across its collector-emitter junction, making it efficient even at low voltages.

Working Principle

The working principle of the PDTC115EK is based on a phenomenon known as the PN junction. The PN junction is formed by joining two different types of semiconductor material together. One side is positively charged, while the other is negatively charged. When a voltage is applied across the junction, the charge carriers on the two sides of the junction flow in opposite directions, creating a current.

The PDTC115EK uses this phenomenon to control the current flowing through its collector-emitter junction. The base is used to control the current flow by controlling the amount of charge carriers entering and leaving the base. When the base voltage is increased, more charge carriers enter the base, and more current flows through the collector-emitter junction. Conversely, when the base voltage is decreased, fewer charge carriers enter the base, and less current flows through the collector-emitter junction.

The PDTC115EK is a versatile device that can be used for a variety of applications. It is well-suited for use in audio amplifiers, motor drives, and digital logic circuits due to its low thermal resistance, low voltage drop, and wide temperature range. The device utilizes the PN junction to control the current flow through its collector-emitter junction.

The specific data is subject to PDF, and the above content is for reference

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