PDTC124EK,115 Allicdata Electronics
Allicdata Part #:

PDTC124EK,115-ND

Manufacturer Part#:

PDTC124EK,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS NPN 250MW SMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC124EK,115 datasheetPDTC124EK,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3; MPAK
Base Part Number: PDTC124
Description

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Single, Pre-Biased transistors are transistors that have a built-in bias current. These transistors are designed to operate at a specific current level and are capable of working in a defined voltage range. This makes them ideal for use in the most demanding applications. The "PDTC124EK,115" is an example of a single, pre-biased transistor.

The "PDTC124EK,115" is a NPN bipolar small-signal discrete transistor. It has been designed to offer improved performance over other similar small-signal transistors. The device comes with a built-in emitter resistor to improve the input impedance of the device and help reduce noise. It also features an integrated base resistor, which increases the stability and accuracy of the device. The transistor is optimized for DC bias applications in the medium voltage range and provides excellent current gain and low noise. It is ideal for use in medium voltage analog circuits, such as amplifiers and other similar devices.

The PDTC124EK,115 transistor has a wide range of applications due to its pre-biased nature. It can be used for a variety of purposes, such as amplifiers, switching, line drivers, and many other circuits where a precise and reliable current bias is required. This wide range of application possibilities makes the PDTC124EK,115 a great choice for engineers looking to optimize their design. The low noise level and medium voltage range also make the device a great choice for audio applications.

The working principle of the PDTC124EK,115 transistor can be explained by understanding how its internal components function. The device contains two PNP transistors. The emitter resistor is connected between the emitter of one of the PNP transistors and ground. The base resistor is then connected between the base of the NPN transistor and ground. When a voltage is applied to the base of the device, current flows from the emitter of the PNP transistor through the base resistor, into the base of the NPN transistor, and out to the collector. The voltage drop across the emitter resistor creates a negative bias current that is able to hold the NPN transistor at its desired state. This bias current is then used to create the desired operating point for the transistor.

The PDTC124EK,115 is an excellent choice for engineers looking to optimize their designs. It offers improved performance, excellent current gain, low noise levels, a wide range of application possibilities, and excellent bias current. The device is ideal for medium voltage analog applications, such as amplifiers and other circuits where a precise and reliable current bias is required. The device is an excellent choice for engineers looking to optimize their design and take advantage of the wide range of possibilities offered by single, pre-biased transistors.

The specific data is subject to PDF, and the above content is for reference

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