Allicdata Part #: | PDTD113ZS,126-ND |
Manufacturer Part#: |
PDTD113ZS,126 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PREBIAS NPN 500MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTD113ZS,126 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 1 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 500mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | PDTD113 |
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A PDTD113ZS,126 is a single bipolar junction transistor, a type of semiconductor device. It is classified as a pre-biased transistor, meaning it has an integrated resistor and photodiode connection that can be utilized in order to create a reliable and stable circuit operation without any additional components. Pre-biased transistors are ideally used in the field of optoelectronic switching, but can also be utilized in a variety of applications.
The PDTD113ZS,126 is commonly utilized in applications where very low input power levels are present, or where noise immunity is crucial. It is also used in situations where reliability and long device life-time are necessary, such as telecom systems or life-critical applications, as well as in radio frequency or microwave applications.
In terms of its working principle,transistors are switching devices that make use of the current flow between two terminals called the collector and the emitter. The current is established by another terminal known as the base. When there is a voltage differential between the two terminals for the base and collector, the transistor switches between two possible states that cause a current to pass from the collector to the emitter. The magnitude of the current is controlled by the voltage from the base.
The PDTD113ZS,126 is designed to reduce the erroneous switching of data due to random noise events. This is achieved by using an integrated resistor and photodiode that works in conjunction with the base of the transistor in order to create a voltage differential. The integrated pre-biased circuit helps to prevent the transistor from being switched on by the random noise events, while still allowing it to switch on when a valid input is applied.
The PDTD113ZS,126 transistor is often used in current or voltage sensing applications due to its reliability and low input power requirements. It can also be used as an optical switch in circuits that need to be switched on or off automatically, such as security systems or closed-circuit television systems. Additionally, the transistor can act as a solid-state switch and be utilized in various applications such as motor control, audio switching, and power supply circuits.
Overall, the PDTD113ZS,126 single bipolar junction transistor offers low power requirements, high reliability, and long device lifetimes. It is ideal for use in applications that need to be operated with low power or where noise immunity is necessary, such as telecom systems, radio frequency or microwave applications, and current or voltage sensing. The integrated pre-biased circuit helps to prevent the transistor from being switched on by random noise events, while still allowing it to switch on when a valid input is applied.
The specific data is subject to PDF, and the above content is for reference
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