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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SAE800IN-ND	SAE800	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Function: Audio Tone Processor Applications: Audio Systems Number of Channels: 1 Interface: Logic Voltage - Supply: 2.8 V ~ 18 V Operating Temperature: -25C ~ 125C (TJ) Specifications: 100kHz Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: P-DIP-8 Base Part Number: SAE800	1000 Order	--
BTIPBOOK-ND	BTIP BOOK	Infineon Technologies	View more Part Status: Active Type: Book Title: Fundamentals of Power Semiconductors for Automotive Applications (2nd Edition) Author(s): Infineon Technologies AG Publisher: Infineon Technologies AG	11 Order	1+: $37.7937
SAE800FKLA1-ND	SAE800FKLA1	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Function: Audio Tone Processor Applications: Audio Systems Number of Channels: 1 Interface: Logic Voltage - Supply: 2.8 V ~ 18 V Operating Temperature: -25C ~ 125C (TJ) Specifications: 100kHz Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: PG-DIP-8 Base Part Number: SAE800	1000 Order	--
SAE800GGEG-ND	SAE800G GEG	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Function: Audio Tone Processor Applications: Audio Systems Number of Channels: 1 Interface: Logic Voltage - Supply: 2.8 V ~ 18 V Operating Temperature: -25C ~ 125C (TJ) Specifications: 100kHz Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8 Base Part Number: SAE800	1000 Order	--
FB20R06W1E3B11H OMA1-ND	FB20R06W1E3B11H OMA1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 29A Power - Max: 94W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 1.1nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	24+: $20.1085
SGB10N60AATMA1T R-ND	SGB10N60AATMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A Power - Max: 92W Switching Energy: 320J Input Type: Standard Gate Charge: 52nC Td (on/off) @ 25C: 28ns/178ns Test Condition: 400V, 10A, 25 Ohm, 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Base Part Number: 10N60	1000 Order	1+: $0
FS50R12W2T4BOMA 1-ND	FS50R12W2T4BOMA 1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 83A Power - Max: 335W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 2.8nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	15+: $31.7688
IRF7303PBFTR-ND	IRF7303TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4.9A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: IRF7303PBF	8000 Order	--
FS150R12KE3GBOS A1-ND	FS150R12KE3GBOS A1	Infineon Technologies	View more Series: EconoPACK+ Part Status: Not For New Designs IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 695W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 10.5nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	4+: $203.865
FF800R17KF6CB2N OSA1-ND	FF800R17KF6CB2N OSA1	Infineon Technologies	View more Part Status: Last Time Buy Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1700V Power - Max: 6250W Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 800A Current - Collector Cutoff (Max): 1.5mA Input Capacitance (Cies) @ Vce: 52nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	2+: $0.63
FZ3600R17HP4HOS A2-ND	FZ3600R17HP4HOS A2	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Configuration: Single Switch Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 3600A Power - Max: 21000W Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 3600A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 295nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	1+: $0.63
IRFR6215TRPBFTR -ND	IRFR6215TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2000 Order	--
BSZ0909NDXTMA1T R-ND	BSZ0909NDXTMA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 15V Power - Max: 17W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-WISON-8	5000 Order	--
IPD90R1K2C3ATMA 1TR-ND	IPD90R1K2C3ATMA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 310A Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
SPW55N80C3FKSA1 -ND	SPW55N80C3FKSA1	Infineon Technologies	View more Series: CoolMOS C3 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 54.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 85 mOhm @ 32.6A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs: 288nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7520pF @ 100V Power Dissipation (Max): 500W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	484 Order	1+: $11.1258 10+: $10.1121 100+: $8.5954
PTFA092211ELV4R 250XTMA1TR-ND	PTFA092211ELV4R 250XTMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: LDMOS Frequency: 940MHz Gain: 18dB Voltage - Test: 30V Current - Test: 1.75A Power - Output: 220W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads Supplier Device Package: H-33288-2	1000 Order	1+: $0
PTFA212001F1V4R 250XTMA1-ND	PTFA212001F1V4R 250XTMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: LDMOS Frequency: 2.14GHz Gain: 15.8dB Voltage - Test: 30V Current - Test: 1.6A Power - Output: 50W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-37260-2	1000 Order	1+: $0
IRF8714TRPBFTR- ND	IRF8714TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1688 Order	--
IRF8734TRPBFTR- ND	IRF8734TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 2.35V @ 50A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3175pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	4000 Order	--
IRFR3806TRPBFTR -ND	IRFR3806TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 50A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 50V Power Dissipation (Max): 71W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
BFP650FH6327XTS A1TR-ND	BFP650FH6327XTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz Gain: 11dB ~ 21.5dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP Base Part Number: BFP650	9000 Order	3000+: $0.1203 6000+: $0.1125 15000+: $0.1048 30000+: $0.0994
BFR380TE6327-ND	BFR 380T E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 12.5dB Power - Max: 380mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75 Base Part Number: BFR380	1000 Order	1+: $0
BCV62BE6327HTSA 1TR-ND	BCV62BE6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: 300mW Frequency - Transition: 250MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4 Base Part Number: BCV62	12000 Order	3000+: $0.0576 6000+: $0.0518 15000+: $0.046 30000+: $0.0432 75000+: $0.0384
BC847SH6727XTSA 1TR-ND	BC847SH6727XTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: P-SOT363-6 Base Part Number: BC847S	1000 Order	21000+: $0.0283
BCR108B6327-ND	BCR 108 B6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 170MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BCR108	1000 Order	1+: $0
BCR166FE6327-ND	BCR 166F E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 160MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3 Base Part Number: BCR166	1000 Order	1+: $0
BCR169TE6327-ND	BCR 169T E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75 Base Part Number: BCR169	1000 Order	1+: $0
BCR133SE6433BTM A1TR-NDTR-ND	BCR133SE6433BTM A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Frequency - Transition: 130MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Base Part Number: BCR133S	1000 Order	1+: $0
IRF6802SDTRPBF- ND	IRF6802SDTRPBF	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 16A Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.1V @ 35A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 13V Power - Max: 1.7W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET Isometric SA Supplier Device Package: DIRECTFET SA	1000 Order	--
IRG4PC50FDPBF-N D	IRG4PC50FDPBF	Infineon Technologies	View more Packaging: Bulk Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 280A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A Power - Max: 200W Switching Energy: 1.5mJ (on), 2.4mJ (off) Input Type: Standard Gate Charge: 190nC Td (on/off) @ 25C: 55ns/240ns Test Condition: 480V, 39A, 5 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	1151 Order	--
IRG4PH30KDPBF-N D	IRG4PH30KDPBF	Infineon Technologies	View more Packaging: Bulk Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A Power - Max: 100W Switching Energy: 950J (on), 1.15mJ (off) Input Type: Standard Gate Charge: 53nC Td (on/off) @ 25C: 39ns/220ns Test Condition: 800V, 10A, 23 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	928 Order	1+: $3.7422 10+: $3.3617 100+: $2.7541 500+: $2.3445 1000+: $1.9773
IRFB4410PBF-ND	IRFB4410PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 58A, 10V Vgs(th) (Max) @ Id: 4V @ 150A Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1484 Order	--
IPD90N04S405ATM A1TR-ND	IPD90N04S405ATM A1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 86A, 10V Vgs(th) (Max) @ Id: 4V @ 30A Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2960pF @ 25V Power Dissipation (Max): 65W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IPZA60R180P7XKS A1-ND	IPZA60R180P7XKS A1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 4V @ 280A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 400V Power Dissipation (Max): 72W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	212 Order	1+: $2.8602 10+: $2.5559 240+: $2.0961 720+: $1.6973 1200+: $1.4315
IRFS59N10DPBF-N D	IRFS59N10DPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 25 mOhm @ 35.4A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1811 Order	--
BCX55H6327XTSA1 -ND	BCX55H6327XTSA1	Infineon Technologies	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89	1000 Order	7000+: $0.0689
IRL7472L1TRPBFT R-ND	IRL7472L1TRPBF	Infineon Technologies	View more Series: StrongIRFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 375A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.59 mOhm @ 195A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 330nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 20082pF @ 25V Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET Isometric L8	1000 Order	--
IPN50R1K4CEATMA 1TR-ND	IPN50R1K4CEATMA 1	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 13V Vgs(th) (Max) @ Id: 3.5V @ 70A Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 178pF @ 100V Power Dissipation (Max): 5W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: SOT-223-3	1000 Order	3000+: $0.1144
BSC016N06NSTATM A1TR-ND	BSC016N06NSTATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 31A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.3V @ 95A Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 30V Power Dissipation (Max): 3W (Ta), 167W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.9751
IRFHM8342TRPBFT R-ND	IRFHM8342TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25A Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Power Dissipation (Max): 2.6W (Ta), 20W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Package / Case: 8-PowerTDFN	1000 Order	--

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