BSZ033NE2LS5ATMA1 Allicdata Electronics
Allicdata Part #:

BSZ033NE2LS5ATMA1-ND

Manufacturer Part#:

BSZ033NE2LS5ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 25V 18A 8SON
More Detail: N-Channel 25V 18A (Ta), 40A (Tc) 2.1W (Ta), 30W (T...
DataSheet: BSZ033NE2LS5ATMA1 datasheetBSZ033NE2LS5ATMA1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8-FL
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 12V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSZ033NE2LS5ATMA1 is a transistor that belongs to the FETs and MOSFETs family, more specifically to its Single category. In short, FETs or Field-Effect Transistors, are unipolar devices whose current flow is controlled by an electric field applied by an input signal to a gate terminal. MOSFETs, on the other hand, are one of the several types of FETs that use the MOS or Metal Oxide Semiconductor process to provide a high input impedance and efficient switching. The BSZ033NE2LS5ATMA1 is specifically a N-channel enhancement mode transistor.

Some of the most common applications for this particular Transistor are: motor controllers, high current sensors, phase control circuits, voltage regulators, amplifiers, power switching circuits and power supplies. It can also be used in low-end computers, digital audio workstations, electric vehicles, electrically actuated devices and security systems. Most of the time, this particular Transistor is used in Audio Amplifiers, but it can also be used in various medium-voltage and high-current systems.

The working principle of the BSZ033NE2LS5ATMA1 transistor is relatively simple. It provides a path for power to be transferred from the source to the load by creating an electric field at the base that is stronger than that of the fixed field between the source and the drain. This allows the current to be directed from the source to either the collector or the emitter. In this way, the current transfer is effectively controlled by the amount of the voltage applied to the gate.

The way it works is fairly simple. When a voltage is applied to the gate of the BSZ033NE2LS5ATMA1, an electric field is created between the source and the drain. This field changes the conductivity of the channel, which allows current to pass, depending on the amount of the applied voltage. The higher the voltage applied, the higher the current that is allowed to flow.

The level of current that is allowed to pass through the BSZ033NE2LS5ATMA1 will depend not only on the applied voltage but also on the type of voltage supplied. In most cases, it requires a DC voltage, but can also be used with an AC voltage if the appropriate components are added.

In summary, the BSZ033NE2LS5ATMA1 belongs to FETs and MOSFETs Transistors family and its Single category. Its main application fields are motor controllers, high current sensors, phase control circuits, voltage regulators, amplifiers, power switching circuits and power supplies. Its working principle is based on the creation of an electric field stronger than that of the fixed field between source and the drain, allowing the current to be directed from the source to either the collector or the emitter. The amount of voltage applied and the type of voltage supply also determine the amount of current that will be allowed to pass through the Transistor.

The specific data is subject to PDF, and the above content is for reference

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