Allicdata Part #: | IRLML6302CT-ND |
Manufacturer Part#: |
IRLML6302TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 20V 780MA SOT-23 |
More Detail: | P-Channel 20V 780mA (Ta) 540mW (Ta) Surface Mount ... |
DataSheet: | IRLML6302TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Micro3™/SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 540mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 97pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 3.6nC @ 4.45V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 610mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 780mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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The IRLML6302TR is an advanced, transistors-FETs single MOSFET designed by International Rectifier (IR). This MOSFET is based on the company’s advanced high-voltage, low-on-resistance MOSFET technology and is designed to operate over the extended temperature range from -55°C to +150°C.
The device is packaged into a 3x3mm surface mount package and is suitable for a wide range of applications. It is suited for use in space-sensitive, high-volume applications such as digital switching, which require low on-resistance and a low gate charge. Other applications for the IRLML6302TR include current sensing, load switching, voltage regulation and amplifier stages.
The IRLML6302TR has an advanced MOSFET structure that offers a low on-resistance of just .005 ohms, which has a maximum tolerance of 5%. This low on-resistance and fast switching characteristics enable the device to be used in a variety of products, such as power converters, power amplifiers and controllers. The device’s low on-resistance and high voltage also make it ideal for applications that require accurate current and voltage regulation.
The device has a linear scale that controls the gate voltage, to provide a low gate charge, and offers a low voltage drop for improved efficiency. It also has an integrated zener diode protection function that allows it to be used in applications with high spike voltages. The IRLML6302TR is also designed to handle higher junction temperatures, with a maximum guaranteed temperature of +150°C and a maximum operating temperature of -55°C.
To control the properties of the IRLML6302TR, the device’s gate voltage is determined by the gate-source voltage (Vgs). The voltage applied to the gate-source controls the MOSFET’s on-off state, by creating or eliminating a current path between source and drain. There are two main types of Vgs, linear and non-linear, which have different effect on the device’s on-off state.
Linear Vgs means that a voltage is applied to the gate and gate-source, controlling the device’s on-off state. Through this type of Vgs, the device is constantly on unless a certain voltage is applied. Non-linear Vgs means that the voltage applied to the gate directly controls the device’s on-off state. This type of Vgs is useful for applications that require fast switching.
The IRLML6302TR operates by using its low gate charge to control the amount of current flow. This is accomplished by controlling the gate-source voltage, which determines the on-off state of the device. Once the device is in the on-state, the current can flow quickly and efficiently with minimal losses.
The device also features a wide range of features, including high-voltage tolerance, low gate-source capacitance, fast switching time, protection from over-voltage, over-current and thermal overload, as well as integrated reverse voltage protection.
The IRLML6302TR is a versatile transistors-FETs single MOSFET that provides the necessary characteristics for a variety of applications. Its low on-resistance, fast switching time and integrated protection features make it ideal for use in power converters, power amplifiers, and controllers. The device’s high voltage tolerance, low gate charge and wide operating temperature range make it great for use in a range of space-sensitive, high-volume applications.
The specific data is subject to PDF, and the above content is for reference
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