Allicdata Part #: | IRFHM3911TRPBF-ND |
Manufacturer Part#: |
IRFHM3911TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 10A PQFN |
More Detail: | N-Channel 100V 3.2A (Ta), 20A (Tc) 2.8W (Ta), 29W ... |
DataSheet: | IRFHM3911TRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 35µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PQFN (3x3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta), 29W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 115 mOhm @ 6.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta), 20A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRFHM3911TRPBF is a type of power MOSFET, and is a single transistor device with a large drain-to-source reverse breakdown voltage. It has a significant role to play in electronic power circuits. This type of transistor is designed to be used in specific applications such as automotive, consumer, and industrial applications.
The main purpose of this MOSFET is to turn on and off an electrical current from a source of power. When this type of transistor is turned on, it becomes a conductor (instead of an insulator) and allows current to flow from the source to the destination. When it is turned off, the transistor acts as an insulator, preventing any current flow in the circuit. This is a very simple but essential function that is essential for many common power applications.
The working principle behind the IRFHM3911TRPBF is relatively simple. It consists of a source terminal, a drain terminal, and a gate terminal. When a voltage is applied to the gate terminal, a certain amount of electric current flows in the circuit. This current is not steady and depends on the amount of voltage that is applied to the gate terminal. In general, as more voltage is applied more current will flow. When the voltage is removed, no current will flow.
In an application where this transistor would be used, a voltage source is applied to the gate terminal, creating a conductive path between the source and drain terminals. This allows electrical current to flow through the transistor, depending on the amount of voltage applied to the gate terminal. This gets the desired result, which is the manipulation of the current or voltage between the source and the drain.
The IRFHM3911TRPBF can be found in a variety of electronics applications such as automotive, consumer, and industrial applications. These applications require a precise control of electrical current so that only the desired result is produced. It can also be found in audio applications, such as amplifiers, speakers, and microphones. The MOSFET is used to create a precise switching action when a signal is present.
Overall, the IRFHM3911TRPBF can be found in a variety of applications, and is a relatively simple but powerful electronic component. It has a variety of uses, and can be used to create precise and efficient switching action. This is why it is so commonly found in modern electronics today.
The specific data is subject to PDF, and the above content is for reference
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