IPB60R180C7ATMA1

The IPB60R180C7ATMA1 is a high voltage n-channel FET, also called a MOSFET, suitable for use in a variety of applications. It is part of the N-channel depletion avoidance MOSFET family, which means that its design geometry prevents excessive depletion at the source-gate interface. Thanks to these features, the IPB60R180C7ATMA1 offers improved frequency response, low gate charge, fast switching, and excellent resistance to kick-back noises.

This device is most commonly used in power management applications. It offers high dielectric strengths for increased safety and can be used to control current in circuit boards. It provides a very low on-resistance, making it suitable for applications requiring low power consumption. The device is also suitable for high voltage isolation control, gate drive circuits, high-frequency power conversion systems, power switches, and high-side switching applications. Thanks to its wide input and operating temperature range, this device can be used in a variety of harsh operational conditions.

The IPB60R180C7ATMA1 operates based on a metal-oxide field-effect structure. Here, a metal layer is placed on top of a semiconductor layer, with the semiconductor layer being connected to the drain and source terminals. The metal layer is connected to the gate terminal. As the voltage on the gate increases, the current flow between the drain and source increases. This is due to the increase in electric field induced by the metal layer, leading to a decrease in the width of the depletion layer.

It is important to note that the gate voltage can determine the current flow of the device. A power switch, for example, can be activated by a low gate voltage (below 1 V). To turn off the device, the applied gate voltage must be reversed. For maximum operation, the device should be operated at a gate voltage of between 4 and 10 volts.

The IPB60R180C7ATMA1 also offers a wide drain-source voltage range and can handle peak drain currents up to 120 A. Its junction-gate-drain breakdown voltage is rated at 600 V and its maximum drain-source on-state resistance is 0.017 Ω. The device also has a good capacitance balance and its input capacitance is typically 0.55 nF and its output capacitance is typically 0.7 nF.

In summary, the IPB60R180C7ATMA1 is an excellent solution for high voltage isolation and power management applications. It provides an impressive level of performance and is suitable for use in harsh environmental conditions. Thanks to its N-channel depletion-avoidance architecture and wide range of features, the IPB60R180C7ATMA1 has become a popular choice for many industrial and commercial applications.