IRFB4410ZPBF Allicdata Electronics
Allicdata Part #:

IRFB4410ZPBF-ND

Manufacturer Part#:

IRFB4410ZPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 97A TO-220AB
More Detail: N-Channel 100V 97A (Tc) 230W (Tc) Through Hole TO-...
DataSheet: IRFB4410ZPBF datasheetIRFB4410ZPBF Datasheet/PDF
Quantity: 15000
Stock 15000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 150µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4820pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 9 mOhm @ 58A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFB4410ZPBF is a power Metal–oxide–semiconductor Field Effect Transistor (MOSFET) which uses a level shift technology. It is a type of Field Effect Transistor (FET) and is typically used in powerswitching applications. This type of transistor is highly efficient when it comes to saving power and reducing on-resistance.

The IRFB4410ZPBF has a maximum drain source voltage rating of 30V and a maximum drain current of 100A. It is rated at 200 watts which makes it suitable for higher power applications requiring fast switching speeds. The main advantage of this device is its capability to fully turn off the power when in low-side switching operation. With low-side switching operation, the device can be used as a power switch or as a logic level shifter.

The most significant performance characteristic of the IRFB4410ZPBF is its low on-resistance. This low on-resistance allows for greater efficiency in power conversion. It also reduces switching losses and allows for lower power consumption over conventional power switches. The device also has a low gate charge which reduces the requirement of heat sinking, thereby improving the overall efficiency.

The IRFB4410ZPBF is primarily used in applications where low-side load switching is required. This includes switching DC-DC converters, power MOSFET driver ICs, motor drivers and configured networks designed for higher power applications.

The working principle of the IRFB4410ZPBF is based on a “floating” gate. This gate is in fact a capacitor float when the gate voltage is lower than the source voltage. When the gate voltage is greater than the source voltage, it will act as a diode, thereby allowing the drain to ‘float’ and transfer a current. In this way, it will act as a switch and the current can be switched on and off.

The IRFB4410ZPBF also has a high avalanche energy transfer capability. This is due to its level shift technology, which helps to increment/decrement the voltage in a step wise fashion. This is ideal for high power applications as it minimizes the switching losses and enhances the power efficiency of the device. Additionally, the device is designed to withstand a high surge current and large energy dissipation.

The IRFB4410ZPBF is a highly efficient and well designed power MOSFET which is suitable for applications requiring fast switching speeds and low power consumption. Its low gate charge and high avalanche energy transfer capability makes it ideal for high power applications requiring low-side load switching. This device is reliable and is well suited for use in many different types of applications.

The specific data is subject to PDF, and the above content is for reference

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