Allicdata Part #: | IRF7331TR-ND |
Manufacturer Part#: |
IRF7331TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 20V 7A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 7A 2W Surface ... |
DataSheet: | IRF7331TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 7A |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1340pF @ 16V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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IRF7331TR is a type of high voltage, high speed, field-effect transistors (FETs) array. It is part of the family of FETs that contains an integrated circuit with an amplification structure and a matrix configuration. This device is designed for use in high voltage, high current applications and is extremely reliable and durable. It can be used in a variety of applications, from RF amplifiers and receivers to medical device applications.
The IRF7331TR is a three-terminal FET array that includes seven FETs in one package. Each FET is connected to a different output pin and is capable of switching high voltage, high current with excellent linearity and either negative or positive voltage gain. This makes the device ideal for applications with large dynamic range and current drive requirements, such as motor control, medical equipment, automotive inverters, UPS, drives and server circuits.
The IRF7331TR features an exceptionally low on-state resistance – 6 ohms and an exceptionally low threshold gate voltage – 1.2 volts. It has an operating voltage range from -55°C to 175°C. The maximum junction temperature for this device is 175°C, meaning that it can operate at higher temperatures than most discrete FETs. This makes it suitable for use in high temperature applications such as electric ranges and ovens.
The IRF7331TR\'s working principle is based on voltage control. This means that when the gate voltage is applied and exceeds the threshold voltage, the FET is turned on. When the gate voltage is removed, the FET turns off regardless of the current flowing through it. This makes the device ideal for applications that require fast response times or frequent switching.
The device is also designed for high-speed switching. It has a 5 ns rise time and 7 ns fall time. This means that it can quickly switch between on and off states for high speed control, making it suitable for applications requiring finely tuned control. It also has a positive temperature coefficient – meaning the on resistance increases with temperature – which makes it ideal for applications that require temperature protection.
Overall, the IRF7331TR is a versatile, high voltage, high speed, field-effect transistor array optimized for use in many applications requiring high voltage, high current with excellent linearity and either negative or positive voltage gain. It is extremely reliable and durable and is suitable for use in a variety of applications, from RF amplifiers and receivers to medical device applications.
The specific data is subject to PDF, and the above content is for reference
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