Silicon programmable timer - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SCT2H12NYTBTR-N D	SCT2H12NYTB	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 18V Vgs(th) (Max) @ Id: 4V @ 410A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 800V Power Dissipation (Max): 44W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	15 Order	400+: $2.6673
C2M0160120D-ND	C2M0160120D	Cree/Wolfspeed	View more Series: Z-FET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 196 mOhm @ 10A, 20V Vgs(th) (Max) @ Id: 2.5V @ 500A Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 800V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1000 Order	1+: $5.5125
SCT3160KLGC11-N D	SCT3160KLGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 208 mOhm @ 5A, 18V Vgs(th) (Max) @ Id: 5.6V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 800V Power Dissipation (Max): 103W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	15 Order	1+: $3.8871
C2M1000170J-TR- ND	C2M1000170J-TR	Cree/Wolfspeed	View more Series: C2M Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V Vgs(th) (Max) @ Id: 3.1V @ 500A (Typ) Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V Power Dissipation (Max): 78W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, DPak (7 Leads + Tab), TO-263CA	1000 Order	1600+: $3.6956
SCH2080KEC-ND	SCH2080KEC	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 117 mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 800V Power Dissipation (Max): 262W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	15 Order	1+: $27.3168 10+: $25.2649 25+: $23.2165 100+: $21.5778
APT80SM120J-ND	APT80SM120J	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 55 mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V Vgs (Max): +25V, -10V Power Dissipation (Max): 273W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	1000 Order	1+: $0
C3M0280090J-TRT R-ND	C3M0280090J-TR	Cree/Wolfspeed	View more Series: C3M Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V Vgs (Max): +18V, -8V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, DPak (7 Leads + Tab), TO-263CA	1000 Order	800+: $2.4167
C3M0065090J-TR- ND	C3M0065090J-TR	Cree/Wolfspeed	View more Series: C3M Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 2.1V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V Vgs (Max): +19V, -8V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V Power Dissipation (Max): 113W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, DPak (7 Leads + Tab), TO-263CA	1000 Order	1600+: $6.8355
C3M0120090D-ND	C3M0120090D	Cree/Wolfspeed	View more Series: C3M Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V Vgs (Max): +18V, -8V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V Power Dissipation (Max): 97W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1000 Order	1+: $4.2525
C3M0075120K-ND	C3M0075120K	Cree/Wolfspeed	View more Series: C3M Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 30.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V Vgs (Max): +19V, -8V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V Power Dissipation (Max): 119W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	1000 Order	1+: $8.379
C3M0065100J-TR- ND	C3M0065100J-TR	Cree/Wolfspeed	View more Series: C3M Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 3.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V Vgs (Max): +15V, -4V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V Power Dissipation (Max): 113.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, DPak (7 Leads + Tab), TO-263CA	1000 Order	1600+: $8.0438
SCT3080KLGC11-N D	SCT3080KLGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 104 mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 5.6V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 800V Power Dissipation (Max): 165W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	15 Order	1+: $7.6545
C2M0045170D-ND	C2M0045170D	Cree/Wolfspeed	View more Series: C2M Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 70 mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 4V @ 18mA Gate Charge (Qg) (Max) @ Vgs: 188nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 3672pF @ 1kV Power Dissipation (Max): 520W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1460 Order	1+: $57.6828
CMF20120D-ND	CMF20120D	Cree/Wolfspeed	View more Series: Z-FET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V Vgs (Max): +25V, -5V Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V Power Dissipation (Max): 215W (Tc) Operating Temperature: -55C ~ 135C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1000 Order	--
SCT3022ALGC11-N D	SCT3022ALGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 28.6 mOhm @ 36A, 18V Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Gate Charge (Qg) (Max) @ Vgs: 133nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 2208pF @ 500V Power Dissipation (Max): 339W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	15 Order	1+: $26.5104
C3M0120100J-ND	C3M0120100J	Cree/Wolfspeed	View more Series: C3M Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V Vgs (Max): +15V, -4V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, DPak (7 Leads + Tab), TO-263CA	1000 Order	1+: $5.7834
APT40SM120S-ND	APT40SM120S	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 3V @ 1mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V Power Dissipation (Max): 273W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	23 Order	1+: $19.7316 10+: $18.2511 25+: $16.7714
APT5SM170B-ND	APT5SM170B	Microsemi Corporation	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 2.5A, 20V Vgs(th) (Max) @ Id: 3.2V @ 500A Gate Charge (Qg) (Max) @ Vgs: 21nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 249pF @ 1000V Power Dissipation (Max): 65W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	1+: $0
CPMF-1200-S080B -ND	CPMF-1200-S080B	Cree/Wolfspeed	View more Series: Z-FET Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 50A (Tj) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V Vgs (Max): +25V, -5V Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V Power Dissipation (Max): 313mW (Tj) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	1000 Order	1+: $0
497-14960-ND	SCT30N120	STMicroelectronics	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 2.6V @ 1mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 105nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 400V Power Dissipation (Max): 270W (Tc) Operating Temperature: -55C ~ 200C (TJ) Mounting Type: Through Hole Supplier Device Package: HiP247 Package / Case: TO-247-3	1000 Order	1+: $19.4355 30+: $17.12 120+: $15.3073
497-16598-5-ND	SCT50N120	STMicroelectronics	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 69 mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 400V Power Dissipation (Max): 318W (Tc) Operating Temperature: -55C ~ 200C (TJ) Mounting Type: Through Hole Supplier Device Package: HiP247 Package / Case: TO-247-3	1000 Order	1+: $25.4457 10+: $23.4706 100+: $20.0425
IXFN50N120SK-ND	IXFN50N120SK	IXYS	View more Part Status: Active FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 52 mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 20V Vgs (Max): +20V, -5V Input Capacitance (Ciss) (Max) @ Vds: 1895pF @ 1000V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	1000 Order	10+: $43.2268
SCT3030KLGC11-N D	SCT3030KLGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Gate Charge (Qg) (Max) @ Vgs: 131nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 2222pF @ 800V Power Dissipation (Max): 339W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	15 Order	1+: $35.4753
IXFN50N120SIC-N D	IXFN50N120SIC	IXYS	View more Part Status: Active FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 50 mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 20V Vgs (Max): +20V, -5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	1000 Order	--
C3M0065090D-ND	C3M0065090D	Cree/Wolfspeed	View more Series: C3M Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 2.1V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 15V Vgs (Max): +18V, -8V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1000 Order	--
APT40SM120B-ND	APT40SM120B	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 3V @ 1mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V Power Dissipation (Max): 273W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	1+: $0
F11004-ND	LSIC1MO120E0120	Littelfuse Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 20V Vgs(th) (Max) @ Id: 4V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 20V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 1125pF @ 800V Power Dissipation (Max): 139W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	496 Order	1+: $13.5513 10+: $12.3165 25+: $11.3926 100+: $10.4691 250+: $9.5453
SCT3040KLGC11-N D	SCT3040KLGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 18V Vgs(th) (Max) @ Id: 5.6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1337pF @ 800V Power Dissipation (Max): 262W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	15 Order	1+: $16.5375
F11005-ND	LSIC1MO120E0160	Littelfuse Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 200 mOhm @ 10A, 20V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 20V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 800V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	330 Order	1+: $10.836 10+: $9.8532 25+: $9.1144 100+: $8.3752 250+: $7.6362
APT70SM70J-ND	APT70SM70J	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 70 mOhm @ 32.5A, 20V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 20V Vgs (Max): +25V, -10V Power Dissipation (Max): 165W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	1000 Order	1+: $0
SCT3060ALGC11-N D	SCT3060ALGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 78 mOhm @ 13A, 18V Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 852pF @ 500V Power Dissipation (Max): 165W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	15 Order	1+: $6.5205
C3M0120100K-ND	C3M0120100K	Cree/Wolfspeed	View more Series: C3M Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	242 Order	1+: $5.7834
SCTWA50N120-ND	SCTWA50N120	STMicroelectronics	View more Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 69 mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 400V Power Dissipation (Max): 318W (Tc) Operating Temperature: -55C ~ 200C (TJ) Mounting Type: Through Hole Supplier Device Package: HiP247 Package / Case: TO-247-3	1000 Order	600+: $16.8669
C2M0045170P-ND	C2M0045170P	Cree/Wolfspeed	View more Series: C2M Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 59 mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 4V @ 18mA Gate Charge (Qg) (Max) @ Vgs: 188nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 3672pF @ 1000V Power Dissipation (Max): 520W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	1 Order	1+: $66.15
C2M0080170P-ND	C2M0080170P	Cree/Wolfspeed	View more Series: C2M Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 125 mOhm @ 28A, 20V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 1000V Power Dissipation (Max): 277W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	4 Order	1+: $28.665
SCT2H12NZGC11-N D	SCT2H12NZGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25C: 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 18V Vgs(th) (Max) @ Id: 4V @ 900A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 800V Power Dissipation (Max): 35W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PFM Package / Case: TO-3PFM, SC-93-3	15 Order	1+: $4.5297 10+: $4.0755
CMF10120D-ND	CMF10120D	Cree/Wolfspeed	View more Series: Z-FET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 20V Vgs(th) (Max) @ Id: 4V @ 500A Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 20V Vgs (Max): +25V, -5V Input Capacitance (Ciss) (Max) @ Vds: 928pF @ 800V Power Dissipation (Max): 134W (Tc) Operating Temperature: -55C ~ 135C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	1+: $0
IXFN70N120SK-ND	IXFN70N120SK	IXYS	View more Part Status: Active FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 4V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 20V Vgs (Max): +20V, -5V Input Capacitance (Ciss) (Max) @ Vds: 2790pF @ 1000V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	1000 Order	10+: $74.3008
APT130SM70B-ND	APT130SM70B	Microsemi Corporation	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 45 mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 700V Power Dissipation (Max): 556W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	1+: $0
C2M0040120D-ND	C2M0040120D	Cree/Wolfspeed	View more Series: Z-FET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 52 mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 1893pF @ 1000V Power Dissipation (Max): 330W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1000 Order	1+: $22.5729

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