IXFN50N120SK Allicdata Electronics
Allicdata Part #:

IXFN50N120SK-ND

Manufacturer Part#:

IXFN50N120SK

Price: $ 47.54
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH
More Detail: N-Channel 1200V 48A (Tc) Chassis Mount SOT-227B
DataSheet: IXFN50N120SK datasheetIXFN50N120SK Datasheet/PDF
Quantity: 1000
10 +: $ 43.22680
Stock 1000Can Ship Immediately
$ 47.54
Specifications
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 20V
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1895pF @ 1000V
Vgs (Max): +20V, -5V
Series: --
Vgs(th) (Max) @ Id: 2.8V @ 10mA
Rds On (Max) @ Id, Vgs: 52 mOhm @ 40A, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Part Status: Active
Description

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The IXFN50N120SK is a popular MOSFET transistor that is widely used in circuit designs. It has a VDSS of 1200 V, a GFS of 150 mS and an RDS(on) of 0.009 Ohms. It is rated for operation at temperatures of up to 175°C.

Application

The IXFN50N120SK is commonly used in high-current, high-voltage switching applications. It is often found in motor drive circuits, power supply circuits and any applications requiring an efficient switching device. It is especially good for applications that require high speed switching due to its low gate charge and low reverse recovery time. It is also frequently used in motor control circuits, photovoltaic systems, high-power amplifiers and pulse circuits.

Operating Principle

The IXFN50N120SK is a ‘n-channel’ MOSFET, meaning it provides better current conduction than traditional p-channel transistors. It consists of metal oxide semiconductor layers that provide electrical insulation between source and drain electrodes. The source and drain electrodes can be connected to a battery or voltage source and a load, respectively. As the voltage supplied to the gate electrode is changed, it modifies the voltage difference between the source and the drain, thus allowing or preventing current flow between them. This is the basic principle of operation of the IXFN50N120SK.

To turn on the IXFN50N120SK, the voltage applied to the gate will be greater than the voltage applied to the source. This increases the current flowing between the source and drain, allowing more current to flow through the circuit. To turn off the device, the voltage applied to the gate must be lower than the voltage applied to the source, cutting off the current flowing between them.

Conclusion

The IXFN50N120SK is a popular MOSFET transistor suitable for many different applications. It is widely used in circuits that involve high currents and high voltages, particularly motor drives, power supplies and switch mode circuits. Its low gate charge and low reverse recovery time make it particularly suitable for applications requiring high speed switching. Finally, its ease of operation means that it can be used as an efficient switching device for both controlled and uncontrolled switching applications.

The specific data is subject to PDF, and the above content is for reference

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