Silicon programmable timer - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
C2M1000170J-ND	C2M1000170J	Cree/Wolfspeed	View more Series: C2M Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V Vgs(th) (Max) @ Id: 3.1V @ 500A (Typ) Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V Power Dissipation (Max): 78W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7 (Straight Leads)	1000 Order	1+: $3.6981
C3M0065100J-ND	C3M0065100J	Cree/Wolfspeed	View more Series: C3M Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 3.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V Vgs (Max): +15V, -4V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V Power Dissipation (Max): 113.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, DPak (7 Leads + Tab), TO-263CA	1000 Order	1+: $8.0451
SCT2160KEC-ND	SCT2160KEC	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 208 mOhm @ 7A, 18V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 800V Power Dissipation (Max): 165W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1 Order	1+: $10.5525 10+: $9.5924 25+: $8.8729 100+: $8.1535 250+: $7.4341
APT5SM170S-ND	APT5SM170S	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2A, 20V Vgs(th) (Max) @ Id: 3.2V @ 500A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 1000V Power Dissipation (Max): 52W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	1000 Order	1+: $0
SCT2450KEC-ND	SCT2450KEC	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 585 mOhm @ 3A, 18V Vgs(th) (Max) @ Id: 4V @ 900A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 463pF @ 800V Power Dissipation (Max): 85W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	15 Order	1+: $6.0291 10+: $5.4281 25+: $4.9458 100+: $4.4633 250+: $4.1014 500+: $3.7395
SCT3120ALGC11-N D	SCT3120ALGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 156 mOhm @ 6.7A, 18V Vgs(th) (Max) @ Id: 5.6V @ 3.33mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V Power Dissipation (Max): 103W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	15 Order	1+: $3.7107
C3M0030090K-ND	C3M0030090K	Cree/Wolfspeed	View more Series: C3M Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 39 mOhm @ 35A, 15V Vgs(th) (Max) @ Id: 3.5V @ 11mA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 15V Vgs (Max): +15V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1864pF @ 600V Power Dissipation (Max): 149W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	1000 Order	1+: $19.404
CPMF-1200-S160B -ND	CPMF-1200-S160B	Cree/Wolfspeed	View more Series: Z-FET Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 28A (Tj) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 20V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 20V Vgs (Max): +25V, -5V Input Capacitance (Ciss) (Max) @ Vds: 928pF @ 800V Power Dissipation (Max): 202W (Tj) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	1000 Order	1+: $0
C3M0120090J-TRT R-ND	C3M0120090J-TR	Cree/Wolfspeed	View more Series: C3M Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V Vgs (Max): +18V, -8V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, DPak (7 Leads + Tab), TO-263CA	1000 Order	800+: $4.3747
APT70SM70S-ND	APT70SM70S	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 70 mOhm @ 32.5A, 20V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 20V Vgs (Max): +25V, -10V Power Dissipation (Max): 220W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
497-16597-5-ND	SCT10N120	STMicroelectronics	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 690 mOhm @ 6A, 20V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 400V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 200C (TJ) Mounting Type: Through Hole Supplier Device Package: HiP247 Package / Case: TO-247-3	575 Order	1+: $7.8183 10+: $7.187 100+: $6.07
APT35SM70B-ND	APT35SM70B	Microsemi Corporation	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 145 mOhm @ 10A, 20V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 700V Power Dissipation (Max): 176W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	1+: $0
C3M0065090J-ND	C3M0065090J	Cree/Wolfspeed	View more Series: C3M Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 2.1V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V Vgs (Max): +19V, -8V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V Power Dissipation (Max): 113W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, DPak (7 Leads + Tab), TO-263CA	1000 Order	1+: $8.5428
SCT2080KEC-ND	SCT2080KEC	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 117 mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 800V Power Dissipation (Max): 262W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	5213 Order	1+: $82.08
SCT2120AFC-ND	SCT2120AFC	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 156 mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 4V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 500V Power Dissipation (Max): 165W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $9.8532 10+: $8.9548 25+: $8.2832 100+: $7.6116 250+: $6.94
C2M0080120D-ND	C2M0080120D	Cree/Wolfspeed	View more Series: C2M Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 5V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V Power Dissipation (Max): 192W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1000 Order	1+: $11.025
SCT3030ALGC11-N D	SCT3030ALGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1526pF @ 500V Power Dissipation (Max): 262W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	1000 Order	1+: $15.5736
C3M0075120J-TR- ND	C3M0075120J-TR	Cree/Wolfspeed	View more Series: C3M Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V Vgs (Max): +15V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V Power Dissipation (Max): 113.6W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, DPak (7 Leads + Tab), TO-263CA	1000 Order	1600+: $8.379
C3M0065100K-ND	C3M0065100K	Cree/Wolfspeed	View more Series: C3M Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 3.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V Vgs (Max): +19V, -8V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V Power Dissipation (Max): 113.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Supplier Device Package: TO-247-4L Package / Case: TO-247-4	1000 Order	1+: $8.0451
C3M0280090J-ND	C3M0280090J	Cree/Wolfspeed	View more Series: C3M Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V Vgs (Max): +18V, -8V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, DPak (7 Leads + Tab), TO-263CA	1000 Order	1+: $2.4192
APT80SM120S-ND	APT80SM120S	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 55 mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V Vgs (Max): +25V, -10V Power Dissipation (Max): 625W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
C2M0025120D-ND	C2M0025120D	Cree/Wolfspeed	View more Series: Z-FET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 2.4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V Power Dissipation (Max): 463W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1000 Order	1+: $46.1727

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