Allicdata Part #: | APT35SM70B-ND |
Manufacturer Part#: |
APT35SM70B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 700V TO247 |
More Detail: | N-Channel 700V 35A (Tc) 176W (Tc) Through Hole TO-... |
DataSheet: | APT35SM70B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 176W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1035pF @ 700V |
Vgs (Max): | +25V, -10V |
Gate Charge (Qg) (Max) @ Vgs: | 67nC @ 20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 145 mOhm @ 10A, 20V |
Drive Voltage (Max Rds On, Min Rds On): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 700V |
Technology: | SiCFET (Silicon Carbide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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APT35SM70B is a highly reliable, low capacitance and low turn-on voltage N-channel silicon-controlled rectifier (SCR) in a TO-220 package that is used in a wide range of power electronic applications. It is a field-effect transistor (FET) with an insulated gate that can be used to control the current flow in a circuit. It offers a high current gain, a low voltage threshold, excellent thermal stability, and a good input impedance.
The APT35SM70B is a single N-channel MOSFET, which means that it uses just one gate and one drain terminal to control the flow of current. It is a voltage-controlled device, which means that the gate voltage determines the resistance of the channel, and the drain current. The gate terminal is insulated from the source and drain terminals. The source terminal is the source of the FET\'s current, and the drain terminal is where the FET\'s current is drawn from.
The APT35SM70B offers an input capacitance of 1.4nF, a low turn-on voltage of 3V, and a continuous current rating of 35A. It also offers an operating temperature range of -55°C to +150°C and a standard gate resistance of 4.3 KOhms. The APT35SM70B is also able to withstand up to 10kV of electrostatic discharge and has a very high input impedance, making it perfect for high-voltage applications.
The APT35SM70B can be used in a wide range of power electronic applications. Firstly, it can be used as a electronic switch in power supplies, power converters, switched mode power supplies, and DC-DC converter designs. It can also be used in high voltage industrial control applications. Secondly, it can be used as a silent switch in audio and video circuits, as well as in low-noise control circuits. Finally, it can be used in high-temperature power device applications such as in renewable energy systems and aircraft and automotive electronics.
The working principle of the APT35SM70B is relatively simple. When a positive voltage is applied to the gate terminal, the MOSFET is turned on and the drain-source voltage falls. This results in a current flow from the source to the drain. The APT35SM70B is especially useful in applications where high current or high voltage switching is required, as it offers superior performance in both applications.
In summary, the APT35SM70B is a single N-channel MOSFET with excellent thermal and electrical stability, a low input capacitance, and a low turn-on voltage. It is capable of withstanding high levels of electrostatic discharge and offers a good input impedance. This makes it ideally suited for high-voltage applications, as well as in power electronic systems such as switched mode power supplies and DC-DC converters. The APT35SM70B offers superior performance in both high current and high voltage applications, and its working principle is relatively simple.
The specific data is subject to PDF, and the above content is for reference
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