Allicdata Part #: | SSM3J134TULFTR-ND |
Manufacturer Part#: |
SSM3J134TU,LF |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | SMALL PCH LOW ON RESISTANCE MOSF |
More Detail: | P-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount U... |
DataSheet: | SSM3J134TU,LF Datasheet/PDF |
Quantity: | 6000 |
3000 +: | $ 0.08009 |
Series: | U-MOSVI |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 93 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 4.7nC @ 4.5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 290pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Supplier Device Package: | UFM |
Package / Case: | 3-SMD, Flat Leads |
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The SSM3J134TU,LF, also known as a dual N-channel junction gate field-effect transistor (JFET), is a two-pin discrete, low-capacitance device used in a variety of applications. It is particularly well-suited for audio, digital and instrumentation designs. JFETs have a unique combination of features that make them highly suitable for a variety of applications. Specifically, the SSM3J134TU,LF has a low-capacitance dual gate, making it ideal for use in frequency-selective circuits and sample-and-hold operations.
A field-effect transistor (FET) is an active device that functions as a voltage-controlled switch or as an amplifier. FETs contain three main parts: the gate, the source and the drain. When a voltage is applied to the gate, it modifies the current flow between the source and the drain. The source and drain are the two terminals of the FET, and the gate serves to control the current flow between them.
MOSFETs, or metal oxide semiconductor field-effect transistors, are a type of FETs where the channel is usually made of a metal oxide semiconductor material. MOSFETs are widely used due to their low input impedance and their ability to switch high currents while maintaining high levels of efficiency.
Single-gate MOSFETs (SG-MOSFET) are a special type of MOSFETs in which the single-gate is used to control the device operation by manipulating the surface potential of the depletion region. This results in low power consumption compared to the multi-gate MOSFETs. SG-MOSFETs are often used in ultra-low-power integrated circuit applications, where low current draw and low channel capacitance are desired.
The SSM3J134TU,LF is a dual N-channel junction gate field-effect transistor that is particularly well-suited for audio, digital and instrumentation designs. Its low-capacitance dual gate design makes it ideal for use in frequency-selective circuits, as well as for sample-and-hold operations. Additionally, it is a single-gate MOSFET, making it suitable for ultra-low-power applications due to its low power draw and low channel capacitance. It is an important part of circuit design and essential for the functioning of many applications.
The specific data is subject to PDF, and the above content is for reference
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