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Search Result:variable resistor chip

 --1504 Item(s) In Category:Transistors - Bipolar (BJT) - Arrays, Pre-Biased

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Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
RN1902,LF(CT RN1902LF(CTTR-N
D		 RN1902,LF(CT Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: US6
1000
Order

3000+:

$0.0423

6000+:

$0.0381

15000+:

$0.0339

30000+:

$0.0318

75000+:

$0.0282

 RN1902LF(CTTR-ND Datasheet
RN2604(TE85L,F) RN2604(TE85LF)T
R-ND		 RN2604(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
3000
Order

3000+:

$0.0556

 RN2604(TE85LF)TR-ND Datasheet
NSVEMC2DXV5T1G NSVEMC2DXV5T1GO
STR-ND		 NSVEMC2DXV5T1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 500mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: SOT-553
1000
Order

4000+:

$0.072

8000+:

$0.0677

12000+:

$0.0633

28000+:

$0.0582

 NSVEMC2DXV5T1GOSTR-ND Datasheet
XN0111H00L XN0111H00LTR-ND XN0111H00L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74A, SOT-753
 Supplier Device Package: Mini5-G1
1000
Order

1+:

$0

 XN0111H00LTR-ND Datasheet
XN0121400L XN0121400LTR-ND XN0121400L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74A, SOT-753
 Supplier Device Package: Mini5-G1
1000
Order

1+:

$0

 XN0121400LTR-ND Datasheet
RN1906FE,LF(CT RN1906FELF(CTTR
-ND		 RN1906FE,LF(CT Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

4000+:

$0.0274

8000+:

$0.0238

12000+:

$0.0202

28000+:

$0.0191

100000+:

$0.0159

 RN1906FELF(CTTR-ND Datasheet
RN2703JE(TE85L,F) RN2703JE(TE85LF
)TR-ND		 RN2703JE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: ESV
1000
Order

1+:

$0

 RN2703JE(TE85LF)TR-ND Datasheet
UP0431500L UP0431500LTR-ND UP0431500L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz, 80MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SSMINI6-F1
1000
Order

1+:

$0

 UP0431500LTR-ND Datasheet
RN2901FE(TE85L,F) RN2901FE(TE85LF
)TR-ND		 RN2901FE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN2901FE(TE85LF)TR-ND Datasheet
NSBC143EPDP6T5G NSBC143EPDP6T5G
-ND		 NSBC143EPDP6T5G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 339mW
 Mounting Type: Surface Mount
 Package / Case: SOT-963
 Supplier Device Package: SOT-963
1000
Order

8000+:

$0.0376

 NSBC143EPDP6T5G-ND Datasheet
NSBC115EPDXV6T1G NSBC115EPDXV6T1
G-ND		 NSBC115EPDXV6T1
G		 ON Semiconductor
View more  Series: Automotive, AEC-Q101
 Part Status: Active
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 100 kOhms
 Resistor - Emitter Base (R2): 100 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 357mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SOT-563
1000
Order

8000+:

$0.0462

 NSBC115EPDXV6T1G-ND Datasheet
IMB3AT110 IMB3AT110-ND IMB3AT110 ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 5mA
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SMT6
 Base Part Number: MB3
1000
Order

3000+:

$0.0731

 IMB3AT110-ND Datasheet
SMUN5235DW1T3G SMUN5235DW1T3G-
ND		 SMUN5235DW1T3G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 187mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: SOT-363
1000
Order

10000+:

$0.0549

 SMUN5235DW1T3G-ND Datasheet
XP0421000L XP0421000LTR-ND XP0421000L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: SMINI6-G1
1000
Order

1+:

$0

 XP0421000LTR-ND Datasheet
EMA6DXV5T1 EMA6DXV5T1OSTR-
ND		 EMA6DXV5T1 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 230mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: SOT-553
 Base Part Number: MA6
1000
Order

1+:

$0

 EMA6DXV5T1OSTR-ND Datasheet
XN0621500L XN0621500LTR-ND XN0621500L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SOT-23-6
 Supplier Device Package: MINI6-G1
1000
Order

1+:

$0

 XN0621500LTR-ND Datasheet
UP04213G0L UP04213G0LTR-ND UP04213G0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SSMini6-F2
1000
Order

1+:

$0

 UP04213G0LTR-ND Datasheet
NSVBA114YDXV6T1G NSVBA114YDXV6T1
G-ND		 NSVBA114YDXV6T1
G		 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 500mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SOT-563
1000
Order

--

 NSVBA114YDXV6T1G-ND Datasheet
PUMH17,115 1727-1741-1-ND PUMH17,115 Nexperia USA Inc.
View more  Packaging: Cut Tape (CT)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: 6-TSSOP
4594
Order

1+:

$0.2331

10+:

$0.1909

100+:

$0.1013

500+:

$0.0667

1000+:

$0.0453

 1727-1741-1-ND Datasheet
EMB61T2R EMB61T2RTR-ND EMB61T2R ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: EMT6
1000
Order

--

 EMB61T2RTR-ND Datasheet
XN0F25600L XN0F25600LTR-ND XN0F25600L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 600mA
 Voltage - Collector Emitter Breakdown (Max): 20V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SOT-23-6
 Supplier Device Package: MINI6-G1
1000
Order

1+:

$0

 XN0F25600LTR-ND Datasheet
RN1502(TE85L,F) RN1502(TE85LF)T
R-ND		 RN1502(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74A, SOT-753
 Supplier Device Package: SMV
1000
Order

1+:

$0

 RN1502(TE85LF)TR-ND Datasheet
RN1906,LF(CT RN1906LF(CTTR-N
D		 RN1906,LF(CT Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: US6
1000
Order

3000+:

$0.032

 RN1906LF(CTTR-ND Datasheet
PEMD30,315 PEMD30,315-ND PEMD30,315 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SOT-666
1000
Order

8000+:

$0.0372

 PEMD30,315-ND Datasheet
XP0111600L XP0111600LTR-ND XP0111600L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: 5-TSSOP, SC-70-5, SOT-353
 Supplier Device Package: SMini5-G1
1000
Order

1+:

$0

 XP0111600LTR-ND Datasheet
RN1906FE(T5L,F,T) RN1906FE(T5LFT)
TR-ND		 RN1906FE(T5L,F,
T)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN1906FE(T5LFT)TR-ND Datasheet
XN0421L00L XN0421L00LTR-ND XN0421L00L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SOT-23-6
 Supplier Device Package: MINI6-G1
3000
Order

3000+:

$0.0701

 XN0421L00LTR-ND Datasheet
EMD59T2R EMD59T2RTR-ND EMD59T2R ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: EMT6
1000
Order

--

 EMD59T2RTR-ND Datasheet
BCR169SE6327BTSA1 BCR169SE6327BTS
A1TR-NDTR-ND		 BCR169SE6327BTS
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 200MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
1000
Order

1+:

$0

 BCR169SE6327BTSA1TR-NDTR-ND Datasheet
NSVB123JPDXV6T1G NSVB123JPDXV6T1
G-ND		 NSVB123JPDXV6T1
G		 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 500mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SOT-563
1000
Order

1+:

$0

 NSVB123JPDXV6T1G-ND Datasheet
DMC264050R DMC264050RTR-ND DMC264050R Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SOT-23-6
 Supplier Device Package: Mini6-G4-B
 Base Part Number: DMC26405
1000
Order

3000+:

$0.0721

6000+:

$0.0678

15000+:

$0.0634

30000+:

$0.0583

 DMC264050RTR-ND Datasheet
NSBC143TDXV6T1 NSBC143TDXV6T1O
S-ND		 NSBC143TDXV6T1 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 500mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SOT-563
 Base Part Number: NSBC1*
1000
Order

1+:

$0

 NSBC143TDXV6T1OS-ND Datasheet
RN2902,LF(CT RN2902LF(CTTR-N
D		 RN2902,LF(CT Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: US6
6000
Order

3000+:

$0.032

6000+:

$0.0278

15000+:

$0.0236

30000+:

$0.0222

75000+:

$0.0208

150000+:

$0.0185

 RN2902LF(CTTR-ND Datasheet
PEMH18,115 PEMH18,115-ND PEMH18,115 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 100mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SOT-666
1000
Order

4000+:

$0.0428

 PEMH18,115-ND Datasheet
NSBC144WDP6T5G NSBC144WDP6T5G-
ND		 NSBC144WDP6T5G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 408mW
 Mounting Type: Surface Mount
 Package / Case: SOT-963
 Supplier Device Package: SOT-963
 Base Part Number: NSBC1*
1000
Order

8000+:

$0.0677

 NSBC144WDP6T5G-ND Datasheet
RN1703JE(TE85L,F) RN1703JE(TE85LF
)TR-ND		 RN1703JE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: ESV
1000
Order

1+:

$0

 RN1703JE(TE85LF)TR-ND Datasheet
UP04211G0L UP04211G0LTR-ND UP04211G0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SSMini6-F2
8000
Order

8000+:

$0.131

 UP04211G0LTR-ND Datasheet
RN1908FE(TE85L,F) RN1908FE(TE85LF
)TR-ND		 RN1908FE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
4000
Order

4000+:

$0.041

 RN1908FE(TE85LF)TR-ND Datasheet
RN2605(TE85L,F) RN2605(TE85LF)T
R-ND		 RN2605(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN2605(TE85LF)TR-ND Datasheet
PUMB15,115 PUMB15,115-ND PUMB15,115 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: 6-TSSOP
1000
Order

3000+:

$0.0412

 PUMB15,115-ND Datasheet
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