RN1906,LF(CT Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	US6

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RN1906,LF(CT application field and working principle) belongs to Transistors - Bipolar (BJT) - Arrays, Pre-Biased. Bipolar junction transistors (BJTs) are three-terminal action devices formed by two PN junctions and are available in two types: PNP (positive-negative-positive) and NPN (negative-positive-negative).The RN1906LF is an NPN-type monolithic low-frequency (LF) pre-biased array designed for use in Class-A power linear amplifiers. It offers excellent linearity and low base current, making it suitable for use as an amplifier in audio power stages, such as amplifiers for audiovisual equipment, musical instruments and musical amplifiers, or in motor control applications.The LT1906LF features Pre-Bias, which allows it to be connected to positive or negative DC supplies and delivered at any point in the collector current (Ic) range. This feature offers performance advantages over traditional BJTs.In operation, the pre-biased array is connected to its DC supply at low currents and voltages, which sets the operating point of the transistor. Further adjustments can be made to the operating point by varying the current flow or voltage levels on both the collector and emitter of the array.The small size of this pre-biased array allows it to be used in small, low-power applications. It is available in a variety of packages and can be used in both through-hole and SMD applications.The RN1906LF features a wide operating temperature range and is rated for use between -40 °C and +125 °C. It is designed to operate within a wide voltage range, from 5V to 30V, and exhibits low base leakage.The device has low power consumption and provides low distortion for signal integrity. It features a high frequency response, making it suitable for use in audio power and signal processing applications. The RN1906LF also offers excellent gain linearity, which makes it suitable for use in motor control and power regulation applications.In summary, the RN1906LF is a pre-biased NPN-type low-frequency transistor array designed for use in Class-A power linear amplifiers. It offers excellent linearity, low-power consumption and low distortion for signal integrity, making it suitable for a variety of applications including audio power stages, musical instruments and motor control.\

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