Allicdata Part #: | RN2906FE(TE85LF)TR-ND |
Manufacturer Part#: |
RN2906FE(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.1W ES6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2906FE(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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The RN2906FE(TE85L,F) is a member of the family of pre-biased Transistors - Bipolar (BJT) - Arrays. It is a voltage-driven circuit operated by applying voltage between the gate and source terminals, which then produces a current proportional to the voltage applied. It is mainly used in high-frequency applications because of its low voltage and power requirements.
The RN2906FE(TE85L,F) is a multi-gate transistor array featuring low-voltage, low-power characteristics and an exceptional high frequency performance. It consists of four independent NPN transistors operating from a single 5V supply and has built-in negative temperature coefficient protection circuit which improved current limiting and device reliability. It is commonly used for various high-frequency mixing, buffering and signal modulation tasks.
The use of the RN2906FE(TE85L,F) in applications relies on its ability to control signals at high frequencies and in low voltage applications. By using this device, designers are able to move from large and bulky components such as integrated circuits and linear amplifiers to a more compact package with higher efficiency. It is often used in a variety of applications including audio mixers, modulators, voltage-controlled oscillators, phase-locked loops, and other high performance analog circuits.
The working principle of the RN2906FE(TE85L,F) is similar to that of a regular transistor, where a current is conducted between the collector and the emitter of a BJT when a voltage is applied between the base and the emitter. The current conducted is determined by the ratio between the collector and emitter wiring, as well as by the applied voltage and base current. By varying the voltage and current applied to the emitter, the current conducted can be controlled, thus making this device suitable for signal mixing and modulation applications.
In order to obtain maximum performance from the RN2906FE(TE85L,F), it is important to properly match the components connected to the input and output of the device, as well as the power supply used. For the best device performance, it is recommended that a voltage stabilizing capacitor be placed between the input of the device and the power source. This will ensure that the device does not become unstable due to an excessive supply current, and that it will maintain its initial performance for a long time.
Due to its low voltage and power requirements, and its ability to control signals within a wide frequency range, the RN2906FE(TE85L,F) has become a valuable component in many different types of applications. From audio mixers and signal modulation to voltage-controlled oscillators and phase-locked loops, its use is only limited by the imagination of the designers. Furthermore, its built-in current-limiting circuit provides the additional safety feature that many high performance designs are looking for.
The specific data is subject to PDF, and the above content is for reference
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