RN2904FE,LF Discrete Semiconductor Products |
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Allicdata Part #: | RN2904FELFTR-ND |
Manufacturer Part#: |
RN2904FE,LF |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.1W ES6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2904FE,LF Datasheet/PDF |
Quantity: | 4000 |
4000 +: | $ 0.03043 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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The RN2904FE is a bipolar transistor array pre-biased with a current gain of 40, making it ideal for battery operated applications where fast response and low current draws are required. This pre-biased design allows for a lower quiescent current and a faster response time. The device features high-performance silicon NPN transistor arrays, optimized for switching and low quiescent current.
The device is widely used in various application fields where low power is essential. In portable and wireless applications, it is suitable for industrial sensing solutions and smart remote sensing. In automotive systems, it is used for driver enablement, switching power supplies and engine control modules.
The working principle of the device is relatively simple. It consists of two NPN transistors connected in parallel, both with a common emitter connection. The emitter of one transistor is connected to the base of the other, while the common base is connected to a current source.
When a voltage is applied to the base of the first transistor, current flows through the other transistor. This current is referred to as the quiescent current. By controlling the voltage applied to the base of the second transistor, it is possible to control the quiescent current. This then allows for fast response time and low quiescent current.
In addition to its low power consumption, the device also offers high-speed and low noise characteristics, making it suitable for a wide range of applications. Its low reverse transfer characteristics make it ideal for automotive, industrial and consumer applications.
The device is also designed for use in a wide range of temperature ranges. This helps to reduce system costs by allowing for greater flexibility when designing for different conditions.
Overall, the RN2904FE is a great device for various application fields where low power is essential. Its pre-biased design allows for a lower quiescent current and faster response time, while its high-speed and low noise characteristics make it ideal for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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RN2904FE,LF | Toshiba Semi... | 0.04 $ | 4000 | TRANS 2PNP PREBIAS 0.1W E... |
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RN2906,LF | Toshiba Semi... | 0.04 $ | 3000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2910FE,LF(CB | Toshiba Semi... | 0.02 $ | 4000 | TRANS 2PNP PREBIAS 0.1W E... |
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RN2967(TE85L,F) | Toshiba Semi... | 0.06 $ | 3000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2969(TE85L,F) | Toshiba Semi... | 0.06 $ | 3000 | TRANS 2PNP PREBIAS 0.2W U... |
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RN2905T5LFT | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2906FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2911FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2901FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2965(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2963(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2962(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2964(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W U... |
RN2961(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2905FE,LF(CB | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2902FE,LF(CT | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.2W E... |
RN2903,LF(CT | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2904,LF(CT | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2902FE(T5L,F,T) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2904FE(T5L,F,T) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2961FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2962FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2963FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2964FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2965FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2966FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2967FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2968FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2969FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2970FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2971FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2901(T5L,F,T) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2902(T5L,F,T) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
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