RN2904FE,LF Allicdata Electronics

RN2904FE,LF Discrete Semiconductor Products

Allicdata Part #:

RN2904FELFTR-ND

Manufacturer Part#:

RN2904FE,LF

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2PNP PREBIAS 0.1W ES6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: RN2904FE,LF datasheetRN2904FE,LF Datasheet/PDF
Quantity: 4000
4000 +: $ 0.03043
Stock 4000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
Description

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The RN2904FE is a bipolar transistor array pre-biased with a current gain of 40, making it ideal for battery operated applications where fast response and low current draws are required. This pre-biased design allows for a lower quiescent current and a faster response time. The device features high-performance silicon NPN transistor arrays, optimized for switching and low quiescent current.

The device is widely used in various application fields where low power is essential. In portable and wireless applications, it is suitable for industrial sensing solutions and smart remote sensing. In automotive systems, it is used for driver enablement, switching power supplies and engine control modules.

The working principle of the device is relatively simple. It consists of two NPN transistors connected in parallel, both with a common emitter connection. The emitter of one transistor is connected to the base of the other, while the common base is connected to a current source.

When a voltage is applied to the base of the first transistor, current flows through the other transistor. This current is referred to as the quiescent current. By controlling the voltage applied to the base of the second transistor, it is possible to control the quiescent current. This then allows for fast response time and low quiescent current.

In addition to its low power consumption, the device also offers high-speed and low noise characteristics, making it suitable for a wide range of applications. Its low reverse transfer characteristics make it ideal for automotive, industrial and consumer applications.

The device is also designed for use in a wide range of temperature ranges. This helps to reduce system costs by allowing for greater flexibility when designing for different conditions.

Overall, the RN2904FE is a great device for various application fields where low power is essential. Its pre-biased design allows for a lower quiescent current and faster response time, while its high-speed and low noise characteristics make it ideal for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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