RN2969(TE85L,F) Allicdata Electronics

RN2969(TE85L,F) Discrete Semiconductor Products

Allicdata Part #:

RN2969(TE85LF)TR-ND

Manufacturer Part#:

RN2969(TE85L,F)

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2PNP PREBIAS 0.2W US6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: RN2969(TE85L,F) datasheetRN2969(TE85L,F) Datasheet/PDF
Quantity: 3000
3000 +: $ 0.05557
Stock 3000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: US6
Description

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Transistors, particularly bipolar junction transistors (BJTs), are the building blocks of the most important products used in today’s society. The RN2969 (TE85L,F) is a popular pre-biased BJT array that is used in a variety of applications. This article will provide an overview of the RN2969 as well as an explanation of its working principle and application fields.

The RN2969 is an array of three independent NPN BJTs housed in an 8-pin package. The package contains three separate single-transistor sections: the base, collector, and emitter. It has a nominal collector-emitter current rating of 8A to 160 mA and a maximum collector-emitter voltage of 25 V. The gain of each transistor section is nominally 350, and the transistor sections are pre-biased with a voltage of 2 V across the collector-emitter junction.

The RN2969 operates by using the pre-biased base/collector junction and the resultant collector-emitter current, known as the "bias current". The bias current of the RN2969 is created by the collective effect of all three transistors connected in parallel. This means that the biased base/collector junction of each individual transistor can be used to control the overall bias current and consequently the collector-emitter current of the package.

The RN2969 can be found in numerous applications. These include amplifiers, latching relays, battery eliminators, gate drivers, and analog-to-digital converters. Additionally, the pre-biased configuration of the RN2969 allows it to be used in systems that require constant current without the need of inductors or other external devices. Furthermore, it can be used in low-power circuits, due to its low current drain, and can be used as a power amplifier as well.

In conclusion, the RN2969 is a useful pre-biased BJT array with numerous applications. Its low current drain and pre-biased configuration make it useful for a variety of circuits and products, including amplifiers, latching relays, battery eliminators, gate drivers, and analog-to-digital converters. Furthermore, the bias current of the RN2969 is created by the collective effect of all three transistors connected in parallel, allowing for the control of the overall bias current and consequently the collector-emitter current of the package.

The specific data is subject to PDF, and the above content is for reference

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