RN1906FE(T5L,F,T) Allicdata Electronics

RN1906FE(T5L,F,T) Discrete Semiconductor Products

Allicdata Part #:

RN1906FE(T5LFT)TR-ND

Manufacturer Part#:

RN1906FE(T5L,F,T)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2NPN PREBIAS 0.1W ES6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: RN1906FE(T5L,F,T) datasheetRN1906FE(T5L,F,T) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
Description

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Bipolar junction transistors (BJTs) have long been employed in the construction of arrays and are useful in providing a high degree of functionality in applications. This includes the RN1906FE(T5L,F,T) array, a type of pre-biased BJT array which is often employed in industry and commercial applications.

The RN1906FE(T5L,F,T) array is composed of a series of NPN and PNP transistors connected in parallel through three separate bases. Its main features include low power consumption, low noise and low capacitance, ensuring the device operates efficiently and reliably in most applications. Its structure also ensures that the array is protected from excessive current flow and voltage fluctuations.

The working principle of the RN1906FE(T5L,F,T) array is based on the use of reverse-biased transistors. This arrangement works by supplying current to the respective emitters of the transistors in the array. When the current is applied, the resulting current flow creates an action much like that of a switch, and this causes the base of one of the transistors to become forward biased. The current will then flow through the transistor, creating a “ON” or “OFF” state which can be used in a range of applications.

The RN1906FE(T5L,F,T) array is capable of being used in a range of applications, owing to its ability to produce a signal that can be used to control other circuits. It is often used in power supplies for regulating voltage, as well as in sensors for detecting pressure and temperature changes. The array can also be used in motor control applications and is increasingly being used in lighting control systems.

In summary, the RN1906FE(T5L,F,T) array is a pre-biased BJT array which offers a high degree of functionality. Its working principle is based on the use of reverse-biased transistors, which can be used to create a “ON/OFF” state. The array is capable of being used in many applications, such as power supplies, temperature sensors, motor control and lighting control systems.

The specific data is subject to PDF, and the above content is for reference

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