DMP21D5UFB4-7B Discrete Semiconductor Products |
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Allicdata Part #: | DMP21D5UFB4-7BDITR-ND |
Manufacturer Part#: |
DMP21D5UFB4-7B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 20V 700MA 3DFN |
More Detail: | P-Channel 20V 700mA (Ta) 460mW (Ta) Surface Mount ... |
DataSheet: | DMP21D5UFB4-7B Datasheet/PDF |
Quantity: | 100000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 700mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 5V |
Rds On (Max) @ Id, Vgs: | 970 mOhm @ 100mA, 5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 500nC @ 4.5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 46.1pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 460mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | X2-DFN1006-3 |
Package / Case: | 3-XFDFN |
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The DMP21D5UFB4-7B is a single enhancement-mode N-channel MOSFET with a breakdown voltage of 350V and a maximum drain current of 20A. It is ideal for integrated circuit (IC) and electromechanical applications, as well as industrial and consumer electronics. The device has a low gate-to-drain capacitance and is designed to provide superior switching performance.
Applications
The DMP21D5UFB4-7B is widely used in the following applications:
- DC-DC converters
- Power switches
- Inverters
- Motor control
- Lamp ballasts
- Data acquisition
- Surge suppression
- Power supplies
- Switching nodes
Working Principle
The DMP21D5UFB4-7B is a metal-oxide-semiconductor field-effect transistor (MOSFET) which works on the principle that the voltage applied to the Gate terminal controls the conductivity of the device. This means that by varying the applied voltage, the current passing through the channel can be regulated, allowing the device to be used as a switch. The device has high input capacitance and low input current and can be used to control both switched and linear loads.
The device is operated in its enhancement mode where the voltage applied to the Gate terminal must be above the threshold voltage of the device to allow current to flow. It has a minimum on-state resistance (RDSon) of 0.07Ω and its maximum drain current (IDS) is 20A. The device also features excellent dielectric strength and extremely low gate capacitance.
The DMP21D5UFB4-7B is available as a single-die or multi-die device, making it suitable for various applications. It can be used as a low-side switch, where the load is connected from the drain to ground, or as a high-side switch, where the load is connected from the source to the power supply.
Conclusion
The DMP21D5UFB4-7B is a single enhancement-mode N-channel MOSFET designed to provide superior switching performance with low input capacitance and low input current. It is used in a variety of applications, including DC-DC converters, power switches, inverters, motor control, lamp ballasts, data acquisition, surge suppression, power supplies, and switching nodes. The device is operated in its enhancement mode and has a minimum on-state resistance of 0.07Ω and a maximum drain current of 20A.
The specific data is subject to PDF, and the above content is for reference
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