Allicdata Part #: | AON7506-ND |
Manufacturer Part#: |
AON7506 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 12A 8DFN |
More Detail: | N-Channel 30V 12A (Ta), 12A (Tc) 3.1W (Ta), 20.5W ... |
DataSheet: | AON7506 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta), 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 9.8 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12.2nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 542pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta), 20.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (3x3) |
Package / Case: | 8-PowerSMD, Flat Leads |
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AON7506 is an integrated low-voltage, low-shielded Field-Effect Transistor (FET) by Taiwan Semiconductor Company. It is a high-performance device with superior robustness and up to 7 amperes of continuous current capability. AON7506 is suitable for all types of applications, especially those requiring high power handling capability and high EMI/RFI shielding effectiveness.
The AON7506 is an N-channel, Logic Level FET, with a gate voltage of 3.3 volts, an output voltage of 0.75 volts, and an operating temperature of -40 to +85 °C. It is a dual-gate FET, with a main gate and a secondary gate, each designed to provide a low input impedance and a low output impedance. The AON7506 also has a minimum on resistivity of 6.5 ohm-milliohms, a high frequency cutoff of 150 kHz, and a maximum drain current of 7 amperes.
The device has two distinct applications. Primarily, it is used as a low-impedance device in the implementation of low-voltage, low-shielded switching applications. In this function, the FET acts as a voltage-controlled switch, and its on/off nature is determined by the gate voltage. A high gate voltage will cause the FET to be on, whereas a low gate voltage will turn the device off.
In addition, the AON7506 can also be used in high-power digital circuit designs, such as high-speed clock lines and power supplies. In these applications, the FET acts as a fast, low-impedance device, allowing the designer to bring large amounts of current into and out of digital circuits. It also provides high-level EMI/RFI shielding capabilities, allowing the designer to reduce electromagnetic interference (EMI).
The AON7506 works by using an N-type semiconductor material in the FET’s gate. When the gate voltage is high, the N-type material will attract electrons from the source to the drain, which changes the channel resistance. This change in resistance of the channel can be used to control the current through the device, thus acting as a switch. The FET can also act as an amplifier if the gate voltage is changeable. By varying the gate voltage, the output current can be amplified.
The AON7506 is a very useful FET for low-voltage, low-impedance, low-shielded applications. It offers a high level of efficiency, robustness, and EMI/RFI shielding capabilities. It’s ideal for applications such as digital circuits and high-speed clock lines, and its low-input, low-output impedance ensures reliable operation. The AON7506 is an ideal choice for designers who want a high-performance FET with low-voltage, low-impedance, and low-shielded functions.
The specific data is subject to PDF, and the above content is for reference
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