Allicdata Part #: | AON7410L_105-ND |
Manufacturer Part#: |
AON7410L_105 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 8DFN |
More Detail: | N-Channel 30V 8A (Ta), 20A (Tc) 1.7W (Ta), 20W (Tc... |
DataSheet: | AON7410L_105 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Last Time Buy |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta), 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 1.7W (Ta), 20W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN-EP (3x3) |
Package / Case: | 8-PowerVDFN |
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AON7410L_105 is part of a family of advanced silicon-enhanced trench MOSFETs (METs) that provide excellent resistance to thermal and electrical stresses. This highly integrated version of the AON7410L_105 family also features on-chip local interconnect network (LIN) protection, which helps protect against high line-to-line transients occurring in connected devices. This makes it an ideal device for automotive and industrial applications.
AON7410L_105 is a low voltage, P-channel MET designed for use in applications such as LIN bus, automotive multimedia systems, LED lighting, and driving high power loads. By using a combination of high performance metallic gate MOSFET and LIGBT, AON7410L_105 can switch high loads with low losses, even under harsh operating conditions. The device offers a low gate charge, excellent gate control and precise control over drain-source voltage, giving designers more flexibility and reducing design times. The MET also provides fast on-time and higher efficiency, reducing current consumption and extending battery life.
The AON7410L_105\'s working principle is based on its built-in gate protection circuit (GPC). This circuit includes a two-phase current detector and an internal sense resistor, which facilitate the sensing of high-frequency transients. When these transients occur, the circuit will immediately detect them, and the internal sense resistor will automatically regulate the current to prevent it from exceeding the safe operating levels.
In addition to its thermal and electrical stress tolerance, the AON7410L_105 also features low gate-source capacitance, which helps to reduce switching time and current consumption. When compared with other types of semiconductors, AON7410L_105 features a higher drain-source breakdown voltage, which allows for higher power densities, better dynamic performance, and improved efficiency.
AON7410L_105 is suitable for automotive and industrial applications such as LIN bus systems, automotive multimedia systems, LED lighting, and driving high power loads. Its stable and reliable performance, high efficiency, and low current consumption provide designers with more flexibility and the ability to meet their specific needs.
The specific data is subject to PDF, and the above content is for reference
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