AON7426_101

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AON7426_101 is a high performance single n-channel enhancement mode Field Effect Transistor (FET) with low drain-source on-resistance. It is a new generation N-Channel Trench MOSFET that uses the advanced planar stripe and DMOS process technologies. This MOSFET is especially suitable for the power switch and switch-in circuits of the new generation of low-voltage high-current applications.

The device features ultra-low on-resistance, fast switching speed and low gate charge. The on-resistance of this device is 7mΩ, making it one of the most efficient and lowest on-resistance devices available on the market. The low gate charge of 30nC also makes this device suitable for high-speed switching applications.

AON7426_101 is easy to use in a wide range of electronic applications. Its low on-resistance makes it ideal for the power switch requirements of switching regulators and DC-DC converters, as well as other power switch applications. Its low gate charge and fast switching speed means that it is suitable for high frequency applications such as motor controllers, as well as other switch-in circuits.

The working principle of the AON7426_101 is simple and efficient. When the gate voltage is applied, the channel current starts to flow through the device resulting in a voltage drop across the channel. This voltage drop is measured via a current sensing resistor, resulting in a voltage measured at the drain terminal which is proportional to the channel current.

The AON7426_101 is able to provide efficient and low on-resistance power switching, as well as high performance and low gate charge switching. Its performance characteristics have been optimized for high frequency applications, such as motor controllers and other switch-in circuits. This makes it the perfect solution for a wide range of applications requiring efficient power switching solutions.

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