AON7408L

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The AON7408L is a silicon-germanium complementary-metal-oxide-semiconductor field-effect transistor (CMOSFET) which are specifically designed to provide low on-resistance, low gate charge, and low operating voltage, making the device an ideal choice for power-switching applications. It is the latest addition to the AOS CMOSFET product family, providing advanced technology for high-side and low-side applications such as power conversion and motor control.

Application Field of AON7408L

The AON7408L is primarily designed for use in high current switching applications such as in automotive power management and lighting applications. It is also suitable for other applications including buck, boost, flyback, half-bridge, push-pull and forward converter topologies, wherein the device can be used as the high-side or low-side switch. Additionally, the device supports single or dual DC-DC power converters.

The device offers many advantages such as low switching losses, improved EMI noise performance, tight gate-threshold voltage spread, low gate-source resistance, and excellent temperature stability. When used in combination with an AON3312L MOSFET as the synchronous rectifier, the device forms a complete power-switching solution. This solution features low-loss switch control, improves power system efficiency, delivers higher power density, and simplifies PCB layout.

Working Principle of AON7408L

AON7408L devices utilize a process technology that combines both silicon and germanium. As a result, the devices feature a low on-resistance, low gate charge and low operating voltage. Most importantly, it is capable of providing twice the output current when compared to a traditional CMOSFET device.

The device is designed with a “split gate-oxide” structure, wherein the source and drain regions are connected via an insulated-gate transistor. The gate of the transistor is connected to an external biased voltage that determines whether or not the device is on. When the gate voltage is greater than the on-threshold voltage, the device is on and the current flows freely between the source and drain regions. However, when the gate voltage falls below the off-threshold voltage, the device is off and no current can flow between the source and drain.

The AON7408L also features an optimized high-side and low-side drive circuitry, which helps reduce switching losses and ensure the highest system efficiency. Furthermore, the device offers a robust package and internal short circuit protection, making it highly reliable in applications where failure is not an option.

Conclusion

The AON7408L is a silicon-germanium CMOSFET device that provides low on-resistance, low gate charge, and low operating voltage, enabling it to be used in a variety of switching applications. Its optimized split-gate design, optimized high-side and low-side drive circuitry, and robust package enable it to provide high performance, improved efficiency, and high reliability. The device is ideal for power management and lighting applications, as well as other high-power applications, such as buck, boost, flyback, half-bridge, push-pull and forward converter topologies.

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