Allicdata Part #: | AON7264E-ND |
Manufacturer Part#: |
AON7264E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CHANNEL 60V 28A 8DFN |
More Detail: | N-Channel 60V 28A (Tc) 27.5W (Tc) Surface Mount 8-... |
DataSheet: | AON7264E Datasheet/PDF |
Quantity: | 1000 |
Series: | AlphaSGT™ |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 27.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN-EP (3x3) |
Package / Case: | 8-PowerVDFN |
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The AON7264E is a power field effect transistor (FET) designed for use in high temperature, high power applications where high efficiency radios, low gate charge, and low power dissipation are key requirements. This MOSFET was specifically designed to be used in applications such as high-efficiency amplifiers, switching converters, regulators, and lighting control circuits. This device operates at a voltage range of between 20V and 110V, with a low on-state resistance of 2.2mOhms at a load current of 10A, making it an ideal solution for portable and high current applications.
The AON7264E features a low gate-source capacitance, allowing for very fast switching speeds while providing excellent thermal performance. Additionally, the output voltage of this FET varies only 3mV from a clamped gate bias of 10V, allowing for precision current/voltage control. This device achieves an ESD threshold of up to 8 kV for HBM and 8kV for CDM, making it suitable for use in a variety of environments.
The AON7264E has a dynamic break down which is the ability to control both its gate-source voltage and its drain-source voltage. Using the dynamic break down, you can control the voltage that is applied across the drain-source terminal of the FET. This allows for the FET to be used in applications such as high side switching, where the voltage is constantly changing. The FET is able to hold its drain-source voltage steady despite the changing voltages applied to the gate-source.
The AON7264E is an N-channel MOSFET, which consists of an array of channels filled with an oxide dielectric. Electrodes on the gate terminal form a gate oxide layer, which acts as an insulator between the gate electrode and the channel. The N-channel provides voltage controlled current flow, allowing you to switch the FET on and off with a gate voltage. This is the basic mechanism of MOSFET operation.
The AON7264E is excellent for applications that require power efficiency, high switching frequency, and low internal capacitance. Its low on-state resistance allows for superior thermal performance, making it ideal for use in battery-powered applications such as laptops and mobile phones. Additionally, its low gate charge enables it to switch quickly, which is beneficial for applications requiring fast response times.
The AON7264E can be used as an amplifier, regulator, gate driver, and in any number of different power control circuits. It is also suitable for use in switch-mode power supplies, motor drives, and DC-DC converters. Due to its high efficiency, power dissipation, and small size, this FET can provide an excellent solution for a variety of power control applications.
The specific data is subject to PDF, and the above content is for reference
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