AON7702B Discrete Semiconductor Products |
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Allicdata Part #: | 785-1507-2-ND |
Manufacturer Part#: |
AON7702B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 13.5A 8DFN |
More Detail: | N-Channel 30V 13.5A (Ta), 20A (Tc) 3.1W (Ta), 23W ... |
DataSheet: | AON7702B Datasheet/PDF |
Quantity: | 1000 |
Series: | SRFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 13.5A (Ta), 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 13.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 810pF @ 15V |
FET Feature: | Schottky Diode (Body) |
Power Dissipation (Max): | 3.1W (Ta), 23W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (3x3) |
Package / Case: | 8-PowerSMD, Flat Leads |
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AON7702B is an advanced power mosfet commonly found in electronic circuits like motor drivers and power controllers. AON7702B transistors are often used in electronic devices which require high voltage and current control due to their high continuous drain current (Id).
AON7702B power mosfet is classified as a single power FET of N-channel type. It has an N-channel MOS-structure that consists of an insulated-gate field-effect with a symmetrically-arranged source-to-drain structure in which the source is on top, the drain underneath, and the gate on the opposite side. With its simple structure, equivalent to a single switch, the AON7702B is able to control the power supply efficiently and accurately.
AON7702B provide very low on-resistance (Rds(on)) when compared to regular MOSFETs and have very low gate threshold voltage (Vth). This makes it the perfect choice for high voltage and high current switching applications. For example, when switching a high voltage power source or driving a motor or even controlling the output voltage of a switching regulator, the AON7702B is the ideal choice as it provides fast response times and low power dissipation.
The working principle of AON7702B is based on the MOSFET structure. A positive voltage applied to the gate will create an inversion layer forming between the gate and the source. As the voltage across the drain and the source increases, the inversion layer will begin to act like a conducting channel and allow current flow through it. In addition, the power dissipation of the MOSFET device is determined by the channel resistance and the channel width, so the channel will be thicker and wider if a higher power needs to be dissipated.
The AON7702B power mosfet is primarily used as an electronic switch or a gate driver in motor control and power management applications. It is suitable for switching battery voltages between 0-12V and a maximum current of 40A. Its low on-resistance (Rds(on)), low gate threshold voltage (Vth) and gate capacitance make it the perfect choice for high current and high voltage switching applications. In addition, the AON7702B is used in many switching power supplies, boost converters, forward converters, buck converters, and DC/DC converters.
In conclusion, the AON7702B is a versatile power FET transistors suitable for many power management and motor control applications due to its thick, wide channel, low gate voltage and low on-resistance. With its simple structure and fast response, it is one of the most popular power MOSFETs available.
The specific data is subject to PDF, and the above content is for reference
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