2N4401

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 1V
Power - Max:	625mW
Frequency - Transition:	250MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92

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2N4401 Application Field and Working PrincipleThe 2N4401 is a bipolar junction transistor (BJT) typically used in low-power amplifying applications, switching systems and other general purpose electronic equipment. Its purpose is to switch a low-power signal on or off by providing a level of gain to boost weak signals or a low-current capability to activate a component. This transistor is of the single type with general purpose features and a high current gain, hfe.The 2N4401 is a 3-terminal component made using NPN technology. The datasheets of the 2N4401 list the applications for the NPN type which include amplifiers, switching systems, DC-DC converters and other general purpose applications. The 2N4401 is considered a general purpose transistor, which gives it more than one general application, such as amplifying, switching and small logic.The collector, base and emitter terminals of the transistor are the three electrodes that allow it to amplify or switch signals. When a current passes through the base terminal and into the emitter, manufacturers specify the current gain, or hfe, of the transistor. The hfe, or current gain of the 2N4401 is normally between 40 and 200, or 3 to 8 at lower current values. Manufacturers list hFE ratings at different levels of current: 0.1 mA, 0.2 mA, 0.5 mA and 1 mA.The 2N4401 can also operate in a switching application. In this mode, the base of the transistor is used to control the collector current. When a current is applied to the base, the transistor switches on, allowing current to flow from the collector to the emitter. When the base current is removed, the transistor switches off, stopping current flow from the collector to the emitter.The 2N4401 can operate at high voltages of up to 300 volts. The datasheet specifies low leakage currents of approximately 0.2 microamps max across the collector-emitter junction. The datasheet also lists a typical ambient temperature range for the 2N4401 of -65°C to +150°C.The 2N4401 has an impressive power dissipation, or power rating, of 500mW. This rating means that it can dissipate up to 500mW of power before it is destroyed. The 2N4401 also has a maximum collector-emitter voltage of 90 volts and a maximum collector current of 800 milliamps. It has a maximum collector-base voltage of 100 volts, and a maximum emitter-base voltage of 6 volts.In summary, the 2N4401 is a general purpose NPN bipolar junction transistor (BJT) used in low-power amplifying applications, switching systems and other general purpose electronic equipment. It is a 3-terminal component made using NPN technology and has a maximum collector current of 800 milliamps. The 2N4401 has a current gain, hFE, of 40 to 200 and a power dissipation of 500mW. It can also operate in ambient temperatures of -65°C to +150°C.

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