2N6714

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	--
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	--
Frequency - Transition:	--
Operating Temperature:	--
Mounting Type:	Through Hole
Package / Case:	TO-237AA
Supplier Device Package:	TO-237
Base Part Number:	2N6714

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The 2N6714 is a silicon, NPN bipolar junction transistor (BJT) designed primarily for use in low power, high speed applications. Used as low noise amplifiers, amplifier stages, and low-frequency oscillators, the 2N6714 can be used in various analog signal processing applications including audio.The basic structures of BJT transistors involve three regions. The base region is between the emitter and collector regions and controls the flow of electrons from the emitter to the collector. The 2N6714 has a silicon NPN construction with a P-type base for both high current and high-speed operation.The 2N6714 is a small signal device with a high current gain and a low saturation voltage. It is characterized by low noise and low power consumption, and has a maximum collector current of 1.2A and a maximum collector-emitter voltage of 30V. The 2N6714 has a collector-to-emitter saturation voltage of 0.15V and a second breakdown voltage of 75V. Its breakdown voltage is well above the rated collector-emitter voltage, making it ideal for use in high-voltage power supply applications.The 2N6714\'s high current gain, low saturation voltage, and low noise enable it to be used in a variety of signal processing applications. It is well suited for amplifier stages, low-frequency oscillators, low noise amplifiers, and audio applications. It has wideband frequency response due to its high current gain, and can be used in high-frequency signal processing applications such as signal mixers, electronic filters, and pulse amplifiers. In addition, due to its small size and low power consumption, it is often used in signal conditioning applications for portable electronic devices such as smartphones and tablets.The working principle of the 2N6714 is relatively simple. The base-emitter and base-collector junctions act as diodes, and current flows from the emitter to the base when the base-emitter junction is forward biased and from the collector to the base when the base-collector junction is forward biased. The current in the base can be increased by external current flowing through the emitter, and the current in the collector is proportional to the current in the base. By controlling this current, the BJT transistor can be used as an amplifier, oscillator, and signal processor.Therefore, the 2N6714 is an excellent choice for a variety of low power, high speed applications. Its small size, low power consumption, and high current gain make it ideal for use in portable devices. Its low saturation voltage and second breakdown voltage make it well suited for use in high voltage power supply applications. Furthermore, its wideband frequency response and low noise make it suitable for use in signal processing and audio applications.

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