Allicdata Part #: | 2N6760-ND |
Manufacturer Part#: |
2N6760 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 400V TO-3 |
More Detail: | N-Channel 400V 5.5A (Tc) 4W (Ta), 75W (Tc) Through... |
DataSheet: | 2N6760 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-204AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4W (Ta), 75W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.22 Ohm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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,The 2N6760 is a common field-effect transistor (FET) designed for linear, switching, and low power applications. This FET is a single enhancement-mode FET, meaning it is designed to be turned on by a logic input gate (voltage) and does not require a biasing current. As such, the device is capable of switching voltage and current-sensitive loads with extreme precision and response time. Additionally, the device has a low power consumption and its minimal static current makes it suitable for use in low-power designs.
The logic input gate allows the 2N6760 to return to its non-conductive state when the gate is no longer supplied with an input voltage. This behavior is at the core of the device\'s functionality, as it enables the user to control the transistor\'s conduction of current. To ensure a consistent response to an external signal, the gate must be supplied a voltage between VGS(off) and VGS(on). This voltage range is typically -2.0 to -8.0 V, and outside this range the transistor will remain in the non-conductive or conductive states.
Due to its control flexibility, the 2N6760 can be used in a variety of applications such as amplification, rectification, and filtering. It can also operate in either a common-source, common-drain, or common-gate configuration, depending on the needs of the circuit. In common-source operation, the current between the source and drain is controlled by the gate voltage. In common-drain operation, the current between the source and drain is determined by the conductivity of the source, while the current in a common-gate configuration is primarily determined by the drain-source voltage.
In addition to its low power consumption and field-effect capabilities, the 2N6760 also offers excellent noise performance. Its low effective capacitance provides level sensitivity that is often necessary for signal switching and amplification. With its semi-conductive material structure, the 2N6760 can handle high input power and is suitable for a variety of temperature ranges.
In summary, the 2N6760 is a versatile, low-power field-effect transistor designed for linear, switching, and low power applications. It is a single enhancement-mode FET, meaning it is controlled by a logic input gate and does not require biasing current. Additionally, its low power consumption and minimal static current make it suitable for use in low-power designs. The device offers excellent noise performance and can handle high input power and different temperature ranges. As such, it is a reliable choice for amplification, rectification, and filtering applications.
The specific data is subject to PDF, and the above content is for reference
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