2N6788U

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The 2N6788U is a high performance N–Channel enhancement mode field–effect transistor (FET) designed for high–speed switching applications. It is designed for low–threshold logic, high–frequency pulse generator, low–noise amplifier, low–distortion and wide bandwidth amplifier, and high–speed analog switching applications. It has an 8V transistor collector-to-emitter breakdown voltage rating, a 5V drain-to-source breakdown voltage rating and a 0.5V gate-to-source breakdown voltage rating.

The 2N6788U is a single–channel device, meaning that it has one P-channel junction and one N-channel junction on the same die, rather than two or more P-channel or N-channel junctions. This helps to reduce the overall area of the device and its cost. The N–channel junction of the 2N6788U provides a high–speed switching capability, while the P-channel junction provides a low–threshold logic capability.

Since it has an 8V transistor collector–to–emitter breakdown voltage rating, it is well–suited for high–power applications, such as switching motor and lighting load circuits. It is also useful for driving high–power load circuits that require high–speed switching, such as driving high–speed actuators and switching high–current motor loads. Furthermore, it can be used for switching high–voltage load circuits requiring low–distortion and wideband operation.

The 2N6788U also has a 5V drain–to–source breakdown voltage rating, which makes it suitable for high–speed switching of high–voltage circuits. The device is especially well–suited for driving high–power load circuits, such as driving high–speed actuation and switching large–current motor loads. Furthermore, the device has a 0.5V gate–to–source breakdown voltage rating, which makes it an ideal choice for low–noise amplifier, high–frequency pulse generator, and low–distortion and wide–bandwidth amplifier applications.

The 2N6788U device works on the principle of a MOSFET (Metal–Oxide–Semiconductor Field–Effect Transistor). It is a voltage–controlled device, meaning that the current flow through the device is controlled by the voltage applied to the gate terminal. When a positive voltage is applied to the gate terminal, the channel connecting the source and drain terminals is “opened”. This allows the current to flow between the source and drain terminals, while the voltage between the source and drain terminals remains nearly constant.

The device has a high input impedance since it is a voltage–controlled device. This makes it suitable for driving circuit that require high–speed switching with minimal power dissipation. Furthermore, the device is also designed to provide superior immunity against electrostatic discharge (ESD). This makes it well–suited for high–frequency and high–temperature applications.

The 2N6788U is an ideal device for a variety of applications such as low power logic, high–speed switching, and high–power load circuits. Its 8V transistor collector-to-emitter breakdown voltage rating, 5V drain-to-source breakdown voltage rating and 0.5V gate–to–source breakdown voltage rating make it an ideal choice for those applications that require high–performance and reliable performance.

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