Allicdata Part #: | 2N6782-ND |
Manufacturer Part#: |
2N6782 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 100V TO-205AF |
More Detail: | N-Channel 100V 3.5A (Tc) 800mW (Ta), 15W (Tc) Thro... |
DataSheet: | 2N6782 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-205AF Metal Can |
Supplier Device Package: | TO-39 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 800mW (Ta), 15W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.1nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 2.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The 2N6782 is a metal oxide semiconductor field-effect transistor (MOSFET) that is used in a number of electronic applications. It is a single-channel FET, meaning that the 2N6782 has one gate terminal, one source terminal, and one drain terminal. This type of transistor is often referred to as a "single-gate" or "single-channel" FET, and as such is used in many specialized applications.
A metal oxide semiconductor field-effect transistor is a type of transistor that uses a metal oxide semiconductor (MOS) layer as its gate. The reason for this is that the MOS layer is electrically insulated from the other layers of the transistor, allowing for higher performance operation due to its ability to respond to voltage input signals more quickly and accurately. This insulation also prevents charge buildup, which can reduce the transistor’s switching performance.
The 2N6782 is a depletion-mode MOSFET, which means that the transistor is turned on as its gate voltage is decreased. This type of FET is often used in circuits that require a higher level of control, such as a voltage regulator. Additionally, these transistors are capable of carrying a high amount of current and are used in various types of power control circuits such as those found in higher power devices.
The 2N6782’s application field and working principle is quite simple. When a voltage is applied to the gate terminal, it creates an electric field which modifies the conductivity of the MOS layer. This, in turn, modifies the amount of current that is able to flow through the gate when it is connected to the source and drain terminals. As the voltage on the gate increases or decreases, so does the amount of current that is able to flow through the drain terminal.
This allows the 2N6782 to be used in many types of circuit designs and applications. One such example is in switching power supplies, where the MOSFET can be used to switch the power on and off quickly and efficiently, while also providing a source of voltage regulation. The 2N6782 can also be found in pulse generators, rectifiers, timing circuits, and many other applications.
In conclusion, the 2N6782 is a powerful and reliable single-channel FET that is used in a variety of different electronic circuits and applications. It has a simple application field and working principle, and is capable of providing a high level of performance. As a result, the 2N6782 is an essential component for any type of circuit or application that requires fast, accurate, and reliable performance.
The specific data is subject to PDF, and the above content is for reference
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