Allicdata Part #: | 2N6768-ND |
Manufacturer Part#: |
2N6768 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 400V TO-204AE TO-3 |
More Detail: | N-Channel 400V 14A (Tc) 4W (Ta), 150W (Tc) Through... |
DataSheet: | 2N6768 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-204AE |
Supplier Device Package: | TO-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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2N6768 is an enhancement-mode, n-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is an ideal component for bandgap voltage references, VCC regulators, high-side switches and numerous other applications. Its advantages lie in its low on-state resistance, excellent gate characteristics and low gate-drive power.
A MOSFET is a type of transistor used in high-power applications, as well as for digital switching. It is comprised of three terminals—the gate, source and drain—which control the flow of current between them. When a voltage is applied to the gate terminal, electrons are attracted away from the channel between the source and the drain, allowing current to flow. As this voltage is increased, the channel becomes increasingly narrower, limiting the current flowing through it.
The 2N6768 MOSFET is designed for use in a wide range of applications including low- to medium-power switching, current sensing and over-current protection. It is also suitable for use in power supply, motor control and audio amplifier circuit designs. Its gate threshold voltage is 4V, making it suitable for direct gate drive from logic devices such as PLLs and microcontrollers.
MOSFETs are typically operated in two modes—enhancement mode and depletion mode. Enhancement mode is when the current flowing through the transistor is controlled by the gate voltage, while depletion mode is when the current is regulated without the application of gate voltage. The 2N6768 is an enhancement-mode device and can be used to switch on or off an electrical circuit, allowing current flow through the source and drain.
The 2N6768 also has a low on-state resistance, making it ideal for power supply and motor control applications. Its low on-state resistance means that it can handle high current at low voltage drops, making it more efficient and reliable in high power applications such as power supplies. It also has static protection against latch-up and is capable of withstanding large surges and voltages spikes.
The 2N6768 is also suitable for use in audio amplifier circuit designs due to its low gate-drive power. This characteristic reduces the amount of power needed to switch the device on or off and helps to improve efficiency. This reduces the amount of heat generated when operating the circuit, making it more reliable and reducing power consumption.
In summary, the 2N6768 is a versatile MOSFET device which is capable of being used in a wide range of applications. It has a low on-state resistance, excellent gate characteristics and low gate-drive power, making it suitable for power supply, motor control and audio amplifier circuit designs. Its static protection against latch-up and its ability to withstand large surges and voltage spikes make it a reliable and robust component.
The specific data is subject to PDF, and the above content is for reference
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