Allicdata Part #: | 2N6766-ND |
Manufacturer Part#: |
2N6766 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 200V TO-204AE TO-3 |
More Detail: | N-Channel 200V 30A (Tc) 4W (Ta), 150W (Tc) Through... |
DataSheet: | 2N6766 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-204AE |
Supplier Device Package: | TO-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 115nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The 2N6766 is a P-Channel Metal Oxide Field Effect Transistor (MOSFET). It features a long channel depletion mode enhancement mode JFET and a large current handling capability. It is used in a wide variety of applications, such as in motor control, switchmode power supplies, and protection circuits.
A MOSFET operates on the principle of majority carrier conduction. In a MOSFET, the majority carrier, or electrons, move from the source to the drain through an electrically insulated channel, called the gate. When a voltage is applied to the gate, it creates an electric field that attracts the electrons and allows them to flow from the source to drain. This is known as the “on” state. Conversely, when a negative voltage is applied to the gate, it creates an electric field that repels the electrons, preventing them from flowing. This is known as the “off” state.
The 2N6766 features a long channel depletion mode, which refers to the distance between the source and drain electrodes. When the distance between the source and drain is greater than the channel length, the electrons are able to move between the two without any external voltage being applied. This is known as the “enhancement mode”, and is desired in applications where the current flow needs to be controlled quickly and accurately.
The 2N6766 also features a large current handling capability. This means that it can pass a larger current than other MOSFETs of similar size. This makes it ideal for applications that require high current levels, such as motor control and switchmode power supplies.
The 2N6766 can be used in a wide variety of applications, including motor control, switchmode power supplies, and protection circuits. It is well-suited for these applications due to its long channel depletion mode, large current handling capability, and ability to quickly and accurately control current flow.
To summarize, the 2N6766 is a P-Channel Metal Oxide Field Effect Transistor (MOSFET) that features a long channel depletion mode enhancement mode JFET and a large current handling capability. It is used in a wide variety of applications, such as in motor control, switchmode power supplies, and protection circuits. The 2N6766 is ideal for these applications due to its long channel depletion mode, large current handling capability, and ability to quickly and accurately control current flow.
The specific data is subject to PDF, and the above content is for reference
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