
Allicdata Part #: | 2N6729-DIE-ND |
Manufacturer Part#: |
2N6729 |
Price: | $ 2.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | MICROSS/On Semiconductor |
Short Description: | DIE TRANS |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | ![]() |
Quantity: | 1000 |
25 +: | $ 2.52000 |
Series: | * |
Part Status: | Active |
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The 2N6729 transistor is part of the Single Bipolar Transistor (BJT) family, and is used in a variety of applications. It is a NPN BJT with an ft of 40MHz and a power dissipation of 500mW. This transistor is particularly suitable for amplification and switching applications.
Features
- NPN Bipolar Transistor.
- Maximum collector current of 500 mA and Maximum Collector‐Emitter Voltage of 25 V.
- Maximum power dissipation of 500 mW.
- High ft of 40 MHz.
- Wide range of applications.
Typical Applications
The 2N6729 transistor can be used in a variety of applications, from RF amplifiers and switching, to small audio amplifiers and other general purpose amplification and switching. Its wide range of features makes it suitable for industrial and consumer applications, from communications systems to high power power supply applications. The wide range of features and suitable for applications makes it an excellent choice for a variety of applications.
Working Principle
The 2N6729 is a NPN Bipolar Transistor, which consists of three layers of semiconductor material, known as the emitter, base and collector. The emitter injects the electrons into the base, where the current-carrying electrons are controlled. Some base electrons then cross over to the collector, and thus, current flow is established between the collector and the emitter. The collector has a circuit connection, thus, a current path is established from the collector to the emitter, the collector-emitter voltage will be proportional to the collector current. The 2N6729 is used to switch or amplify signals, depending on the current levels applied to the emitter and collector.
Conclusion
The 2N6729 is a Single Bipolar Transistor (BJT) that can be used in a wide range of applications, from RF amplifiers and switching to audio amplifiers and other general purpose applications. It has a wide range of features, including a high ft of 40MHz, a maximum collector current of 500 mA and a maximum collector-emitter voltage of 25V. Its working principle is based on the NPN Bipolar mode of operation, where the current is controlled by the base and the current-carrying electrons are transferred from the emitter to the collector. By understanding its features and working principle, it is possible to determine the best application for the 2N6729 and make the most of this powerful transistor.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
2N6784 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 200V TO-205AF... |
2N6714 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN MED PWR 30V 2A ... |
2N6782 | Microsemi Co... | -- | 1000 | MOSFET N-CH 100V TO-205AF... |
2N6782U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 100V 18LCCN-C... |
2N6719 | ON Semicondu... | 0.0 $ | 1000 | NPN HIGH VOLTAGE POWER 30... |
2N6796U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 100V 18LCCN-C... |
2N6764 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 100V TO-204AE... |
2N6729 | MICROSS/On S... | 2.77 $ | 1000 | DIE TRANSBipolar (BJT) Tr... |
2N6768 | Microsemi Co... | -- | 1000 | MOSFET N-CH 400V TO-204AE... |
2N6766T1 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 200V TO-254AA... |
2N6784U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 200V 18LCCN-C... |
2N6796 | Microsemi Co... | -- | 1000 | MOSFET N-CH 100V TO-205AF... |
2N6726 | ON Semicondu... | -- | 1000 | TRANS PNP MED PWR 30V 2A ... |
2N6756 | Microsemi Co... | -- | 1000 | MOSFET N-CH 100V TO-3N-Ch... |
2N6764T1 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 100V 38A TO-2... |
2N6715 | ON Semicondu... | 0.0 $ | 1000 | NPN SILICON AUDIO POWERBi... |
2N6770 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 500V 12A TO-2... |
2N6790U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 200V 18LCCN-C... |
2N6762 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 500V TO-3N-Ch... |
2N6790 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 200V TO-205AF... |
2N6768T1 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 400V 14A TO-2... |
2N6770T1 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 500V 12A TO-2... |
2N6760 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 400V TO-3N-Ch... |
2N6788U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 100V 18LCCN-C... |
2N6798 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 200V TO-205AF... |
2N6798U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 200V 18LCCN-C... |
2N6724 | ON Semicondu... | -- | 1000 | TRANS NPN DARL 40V 1 AMP ... |
2N6727 | ON Semicondu... | 0.0 $ | 1000 | PNP GENERAL PURPOSE AMPLI... |
2N6788 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 100V TO-205AF... |
2N6725 | ON Semicondu... | -- | 1000 | NPN SILICON POWER DARLING... |
2N6766 | Microsemi Co... | -- | 1000 | MOSFET N-CH 200V TO-204AE... |
2N6758 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 200V TO-3N-Ch... |
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