2N6796

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2N6796 is a powerful, low-cost silicon-gate, non-degenerative, N-channel Enhancement Mode, Field-Effect Transistor (FET). As an industrial-grade device, it can be used in a wide range of applications, including power conversion and control, radio frequency (RF) signal processing, as well as switching applications.

The 2N6796 looks like a conventional FET, yet operates differently. Unlike the conventional FET, which is a two-terminal device, the 2N6796 is a three terminal device. It consists of two terminals (the source and the drain) and the gate terminal which is the control point. The gate terminal is used to control the current flow from the source to the drain. By changing the voltage of the gate terminal, the amount of current flowing from the source to the drain can be increased or decreased.

The working principle of the 2N6796 is based on the positive voltage applied to the gate terminal. When the positive voltage is applied to the gate terminal, a field-effect is created between the gate and the source. This creates an electric field, which modifies the behavior of the electrons in the channel region, thus controlling the current flow between the source and the drain. In a 2N6796, the current is proportional to the positive voltage applied to the gate terminal.

The 2N6796 is suitable for a wide range of applications such as switching, power conversion and control, radio frequency (RF) signal processing, and light dimming. This versatile transistor is being used in amplifiers, switching regulators, inverters and rectifiers, pulse generators, and voltage multipliers. It can also be used in the control of low-voltage power circuits, where very high input impedance and low current consumption are required. Its small size and low price make it an ideal choice for applications that require a high input impedance and low current consumption.

In addition to its many applications, the 2N6796 also offers excellent thermal stability, making it ideal for use in high-temperature environments. This FET has a maximum operating temperature of up to 175 °C, and a threshold voltage of 0.7 Volts. It has an extremely low on-resistance of 0.5 ohms, making it capable of handling high power levels. Furthermore, it has a very low threshold voltage to ensure fast switching.

In conclusion, the 2N6796 is a powerful, low-cost silicon-gate, non-degenerative, N-channel Enhancement Mode, Field-Effect Transistor (FET). Its three terminal design offers excellent power conversion and control, and its small size and low cost make it ideal for a variety of applications. Furthermore, its excellent thermal stability, high input impedance and low current consumption make it suitable for a wide range of applications, from amplifiers to voltage multipliers. Altogether, the 2N6796 is an ideal solution for power management requirements.

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