2N6764 Allicdata Electronics
Allicdata Part #:

2N6764-ND

Manufacturer Part#:

2N6764

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 100V TO-204AE TO-3
More Detail: N-Channel 100V 38A (Tc) 4W (Ta), 150W (Tc) Through...
DataSheet: 2N6764 datasheet2N6764 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-204AE
Supplier Device Package: TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 65 mOhm @ 38A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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The 2N6764 is a metal oxide semiconductor field effect transistor (MOSFET) designed for use in power switching applications. With a maximum drain-source voltage of 200V and a maximum drain current of 8A, this device provides high power capability in a relatively small package. In addition, its low on-state resistance and fast switching speed make it an ideal choice for power conversion and motor control applications.

A MOSFET is a voltage-controlled semiconductor device that operates by modulating the conductivity of a channel by a gate voltage. The 2N6764 is a single MOSFET, meaning that it is composed of one source and one drain terminal, which are separated by a channel which can be controlled by the connected gate terminal. The source and drain terminals are connected to the device\'s load or power supply, and the gate terminal can be used to control the relative conductivity of the source and drain. When the gate voltage is applied, the conductivity of the source and drain is greatly increased, allowing current to flow from the source to the drain. Conversely, when the gate voltage is removed, the conductivity of the source and drain is greatly reduced and current flow is stopped.

The 2N6764 is designed for applications requiring high power switching. It can be used in power conversion applications, such as DC to AC conversion, and motor control applications, such as speed control. With its low on-state resistance and fast switching speed, the 2N6764 can provide high efficiency and excellent response time. In addition, its 200V drain-source voltage rating provides excellent protection against overvoltage conditions, making it suitable for use in many industrial environments.

The 2N6764 is also suitable for use in many other applications requiring a high power switch. Its small package size and low on-state resistance allow it to be used in high density printed circuit boards, and its high drain-source voltage rating and fast switching speed make it suitable for use in high frequency circuits. Its low on-state resistance and fast switching speed also make it suitable for use in a wide variety of motor control circuits.

Overall, the 2N6764 is an ideal choice for applications requiring a high power switch, such as power conversion and motor control applications. Its low on-state resistance and fast switching speed make it an excellent choice for many power switching applications, and its high drain-source voltage rating and small package size make it ideal for use in many industrial environments. With its combination of features, the 2N6764 is a great choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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