2N6796U

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The 2N6796U is an advanced field-effect transistor (FET) that uses a single MOSFET chip to perform many key functions in any integrated circuit. This makes it ideal for use in both digital and analog circuit designs, particularly for applications that require high-speed switching, low and high voltage circuit protection, and low power consumption. It is also suitable for power management, embedded signal conditioning and wireless data communication.

At the heart of the 2N6796U transistor is a large source region, which is connected to the gate in order to create a large capacitor-like effect. This allows the transistor to switch quickly and accurately, while providing protection against ESD (electrostatic discharge). The 2N6796U also features an ESD tolerance that makes it suitable for use in both commercial and industrial applications.

The 2N6796U\'s source region is made up of two internally connected channels, called source regions A and B. Channel A is used for the high speed switching, while channel B is used for the low power consumption, providing improved performance and reliability. When channel A is open, the transistor\'s internal resistance will be reduced, allowing more current to flow through the channel. As the channel is closed, the resistance increases, which helps to reduce noise and prevent electrical interference.

The Wide Drain Enhanced (WDE) design of the 2N6796U allows it to operate at up to 70V. This makes it ideal for applications in which high voltage circuit protection is required, such as motor controls and robotics. The WDE design also helps to reduce power dissipation, resulting in improved efficiency and longer battery life.

The 2N6796U has a wide supply voltage, ranging from 2.5 to 17V. This allows it to be compatible with a wide range of input power sources and makes it easy to integrate into existing systems. Additionally, it can be used in both high temperature and low temperature applications, making it suitable for a variety of applications, such as industrial and consumer electronics.

The 2N6796U offers several distinct advantages compared to other types of transistors. It has a lower on-state resistance, which helps to reduce power consumption. The WDE design and the integrated ESD protection help to improve reliability and reduce electrical interference. The wide supply voltage range and the compatibility with a variety of input power sources make it easy to integrate into existing systems.

The 2N6796U can be used in a variety of applications where high speed switching is required. These include motor controls, audio systems, data converters, instrumentation systems, embedded systems, and robotics. It has been designed to meet challenging requirements and has been tested to MIL-STD-461D emissions standards, making it an ideal solution for high-performance, low-power applications.

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