2N6798U

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FETs (Field Effect Transistors) are one of the most widely used electronic components in today\'s electrical and electronic circuits. FETs are generally used to amplify or switch electronic signals depending on their circuits. There are various types of FETs, such as MOSFETs (Metal Oxide Semiconductor FETs) and BSTs (Bipolar Junction Transistors) among others. In this article, we will discuss the application field and working principle of 2N6798U, which is a MOSFET or Metal Oxide Semiconductor Field Effect Transistor.

MOSFETs are essentially a three-terminal devices with a source, a drain, and a gate. It is a voltage-controlled device which means that the current can be controlled by applying an appropriate voltage to the gate terminal. It is essentially a three-layer device which includes an insulation layer between the gate and the semiconductor, called the gate oxide. This insulation layer generally consists of silicon dioxide.

2N6798U is a Single N-channel Enhancement-mode MOSFET, with a breakdown voltage of 20 V. It is generally a high-current device and has very good current-handling capability. It is typically used as a power switch in high power switching and amplification applications.

The operation of 2N6798U can be understood by considering how it works in an N-channel Enhancement-mode MOSFET. The source terminal is connected to the negative side of the supply while the drain is connected to the positive side of the supply. When a positive voltage is applied at the gate terminal, it causes electrons to repel away from the gate within the semiconductor. This creates a channel of electrons between the source and drain, thereby allowing current to flow through the device.

If the applied voltage at the gate is more than the threshold voltage of the FET, then the device will be fully saturated, meaning that the current flowing through the device will be limited only by the resistance of the drain-to-source connection and the supply voltage. This is why it is often used in high power amplifying and switching applications such as DC motors and supplying power to LEDs.

2N6798U can also be used for power MOSFET driver circuits, where the gate voltage needs to be controlled for precise current flow through the component. In these types of circuits, the FET is usually used in conjunction with a logic buffer IC or an op-amp, which is used to control the voltage applied at the gate terminal.

In conclusion, 2N6798U is an N-channel Enhancement-mode MOSFET which has excellent current-handling capabilities and is typically used for applications such as high power switching and amplification, as well as for power MOSFET driver circuits. It is an excellent choice for applications which require precise control of the gate voltage in order to control the current flow through the component.

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