Allicdata Part #: | 2N6726-ND |
Manufacturer Part#: |
2N6726 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP MED PWR 30V 2A TO-237 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 2A Through Hole... |
DataSheet: | 2N6726 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-237AA |
Supplier Device Package: | TO-237 |
Base Part Number: | 2N6726 |
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2N6726 application field and working principle
The 2N6726 is a silicon, NPN, epitaxial, planar, high voltage transistor.
The 2N6726 transistor is a single NPN transistor with a collector-emitter voltage rating of 500V and a power dissipation rating of 1W. It is also a very fast switching device with a high current gain. It is suitable for applications in switching, amplification and low power audio applications.
Application field
The 2N6726 transistor is a versatile transistor that can be used in a wide variety of applications such as switching, amplification and low power audio applications. It is a very reliable device with a high voltage rating and power dissipation rating that makes it a good choice for applications requiring high reliability.
Some of the applications for 2N6726 transistors include motor control and switching applications, power switches, high voltage switches, linear amplifiers, digital circuits, and low power audio applications. It can also be used for pulse circuits, switching regulators, and power and drivers circuits.
Working principle
The 2N6726 is a bipolar junction transistor (BJT). It consists of three semiconductor layers, the emitter, the collector and base. The base is the control element of the transistor, and the emitter and collector are the active elements. When current flows through the base, it creates a voltage difference between the emitter and the collector, which causes electrons to pass from the emitter to the collector. The current gain of the transistor is a measure of the amount of current that flows into the collector compared to the amount of current flowing into the base. The higher the current gain, the higher the current that can be amplified.
The 2N6726 transistor is a very fast switching device. The switching speed of a transistor depends on the design of the transistor and the amount of current flowing through it. The faster the switching speed, the better the transistor will be for high speed applications.
The 2N6726 transistor is also a very reliable device with a high voltage rating and power dissipation rating. Since the voltage and power dissipation ratings are very high, the transistor is suitable for applications requiring a high level of reliability.
Conclusion
The 2N6726 transistor is a versatile, high voltage, and fast switching transistor suitable for a variety of applications such as motor control, switching, and low power audio. Its high current gain and reliability make it a good choice for applications requiring high performance and reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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2N6714 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN MED PWR 30V 2A ... |
2N6726 | ON Semicondu... | -- | 1000 | TRANS PNP MED PWR 30V 2A ... |
2N6724 | ON Semicondu... | -- | 1000 | TRANS NPN DARL 40V 1 AMP ... |
2N6762 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 500V TO-3N-Ch... |
2N6770 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 500V 12A TO-2... |
2N6756 | Microsemi Co... | -- | 1000 | MOSFET N-CH 100V TO-3N-Ch... |
2N6758 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 200V TO-3N-Ch... |
2N6760 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 400V TO-3N-Ch... |
2N6764 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 100V TO-204AE... |
2N6766 | Microsemi Co... | -- | 1000 | MOSFET N-CH 200V TO-204AE... |
2N6766T1 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 200V TO-254AA... |
2N6768 | Microsemi Co... | -- | 1000 | MOSFET N-CH 400V TO-204AE... |
2N6782 | Microsemi Co... | -- | 1000 | MOSFET N-CH 100V TO-205AF... |
2N6782U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 100V 18LCCN-C... |
2N6784 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 200V TO-205AF... |
2N6784U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 200V 18LCCN-C... |
2N6788 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 100V TO-205AF... |
2N6788U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 100V 18LCCN-C... |
2N6790 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 200V TO-205AF... |
2N6790U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 200V 18LCCN-C... |
2N6796 | Microsemi Co... | -- | 1000 | MOSFET N-CH 100V TO-205AF... |
2N6796U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 100V 18LCCN-C... |
2N6798 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 200V TO-205AF... |
2N6798U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 200V 18LCCN-C... |
2N6764T1 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 100V 38A TO-2... |
2N6768T1 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 400V 14A TO-2... |
2N6770T1 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 500V 12A TO-2... |
2N6729 | MICROSS/On S... | 2.77 $ | 1000 | DIE TRANSBipolar (BJT) Tr... |
2N6715 | ON Semicondu... | 0.0 $ | 1000 | NPN SILICON AUDIO POWERBi... |
2N6719 | ON Semicondu... | 0.0 $ | 1000 | NPN HIGH VOLTAGE POWER 30... |
2N6725 | ON Semicondu... | -- | 1000 | NPN SILICON POWER DARLING... |
2N6727 | ON Semicondu... | 0.0 $ | 1000 | PNP GENERAL PURPOSE AMPLI... |
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