Allicdata Part #: | 2N6756-ND |
Manufacturer Part#: |
2N6756 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 100V TO-3 |
More Detail: | N-Channel 100V 14A (Tc) 4W (Ta), 75W (Tc) Through ... |
DataSheet: | 2N6756 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-204AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4W (Ta), 75W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 210 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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2N6756 Application Field and Working Principle
The 2N6756 is a power FET, or field-effect transistor, designed especially for use in power switch circuits. It has a maximum collector-emitter voltage (Vce) of 100V, a drain current of 8A, and a break-down voltage of 49V. It is also rated for pulse use up to a maximum frequency of 10kHz. It is a very reliable and efficient component, and is often used in a variety of applications from industrial power supplies to automotive power control circuits.
Overview of the 2N6756
The 2N6756 is a power MOSFET, and is one type of a larger FET family which stands for field-effect transistor. It has a power dissipation rating of 64W, and a maximum channel temperature of 175°C. It is available in a TO-220AC package, and has a low gate threshold voltage and typical capacitances. The Gate – Drain Breakdown Voltage (Vgds) provided by the 2N6756 is rated at 58V, while the Gate – Source Breakdown Voltage (Vgss) is rated at 49V.
Working Principle of the 2N6756
The 2N6756 is a type of power MOSFET, or metal-oxide-semiconductor field-effect transistor. It operates according to the principle of creating a channel-layer between its source and drain, which is then controlled via the applied gate voltage. This channel-layer forms when a positive voltage is applied to the gate of the 2N6756. When a power source is connected to the channel-layer, an electric field is formed in the thin layer of silicon which allows for current to flow through it. This current actually flows from the source to the drain and creates a voltage drop across the channel-layer due to the resistance of the silicon. This voltage drop is controlled by adjusting the applied gate voltage.
2N6756 Application Fields
The 2N6756 can be found being used in a variety of electronic applications. It is often used in motor control circuits as it is capable of handling large currents and is reliable enough to be used in demanding motor switching applications. Additionally, it is used in solar energy systems, DC-DC converters, battery chargers, and automotive power circuits. It can also be used in industrial power supplies as an efficient and reliable power switch.
Conclusion
The 2N6756 is an efficient, reliable, and powerful FET, specifically designed for use in power switch circuits. It is used in a variety of applications from industrial power supplies to automotive power control circuits. It is capable of handling high currents, and has a maximum collector-emitter voltage (Vce) of 100V, a drain current of 8A, and a break-down voltage of 49V. It is a very reliable and efficient component, and its use can be found in a variety of industrial, automotive, and solar energy applications.
The specific data is subject to PDF, and the above content is for reference
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