2N6788

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2N6788 is a type of Field-Effect Transistor (FET) belonging to Metal-Oxide Semiconductor FET (MOSFET) family. It is considered a single MOSFET due to its three-terminal structure, with Source (S), Gate (G), and Drain (D). 2N6788 is a silicon n-channel enhancement type MOSFET transistor developed by the semiconductor manufacturer, Motorola.

In theory, a FET is a voltage-controlled switch. When the voltage applied across its gate is below a certain level, it is said to be "off" and no current will flow between the source and drain. However, when the voltage is increased to a point above the threshold, the FET is said to be "on" and it will allow the current to flow between the source and drain. Thus, it provides an effective way to control current without having to physically move any parts.

The major application of 2N6788 is power switching. It is mostly used in power switching circuits and applications such as DC-DC converters, power supplies, switch-mode power amplifiers and other related power applications. Its power switching capabilities make it very versatile and suitable for many applications.

The working principle of 2N6788 is relatively straightforward. The Gate of the transistor is connected to a voltage source such as a battery or a power supply. When the voltage is increased, the Gate voltage will cause charges to accumulate in the Gate region, towards the semiconductor substrate. This causes an electric field between the Gate and the Source, which will increase and repel electrons from the Source. This eletric force, along with the electric field created by the Gate voltage, will form a channel between the Source and Drain, allowing electrons to flow, thus creating current.

The channel created by the Gate voltage across the Source and Drain regions can be controlled by adjusting the voltage applied to the Gate terminal. This allows the user to control the amount of current flowing through the transistor, as well as the direction of the current flow. For example, if the Gate voltage is increased, the current will flow from the Drain to the Source, and vice versa.

In conclusion, the 2N6788 is a versatile, single MOSFET that is suitable for many power switching applications, particularly the ones requiring the device to be operated at constant drain current and drain-source resistance range. Because of its simple working principle and excellent electrical performance, the 2N6788 can be used in a wide variety of applications, both in consumer and industrial products.

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