2N6725 Allicdata Electronics
Allicdata Part #:

2N6725-ND

Manufacturer Part#:

2N6725

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: NPN SILICON POWER DARLINGTON
More Detail: Bipolar (BJT) Transistor NPN - Darlington 50V 1A ...
DataSheet: 2N6725 datasheet2N6725 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-237AA
Supplier Device Package: TO-237
Base Part Number: 2N6725
Description

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2N6725 is one of the classic transistors in the bipolar junction transistor (BJT). It was introduced in the late 1960s and is still widely used today. It is a NPN transistor that can handle a wide range of currents, from signal levels to higher power currents.

Application

The 2N6725 is usually used in a variety of applications such as amplifier circuits, magnetic amplifiers, switch circuits, high voltage power supplies, current limiting circuits and signal processing circuits. It is also used as a switch transistor in many high-power switching applications such as the power supply in an electric guitar. It has an excellent performance in applications where a high collector current is required with moderate voltage such as auto zone control, relay driver and DC motor driver.

It is also used in radio frequency amplifiers and tuned circuits, where it offers good performance with a large signal-to-noise ratio. Additionally, the 2N6725 transistor is ideal for high-speed switching applications as it has a good switching time (on/off) and a high-frequency response.

Working Principle

The working principle of a 2N6725 transistor involves the movement of electrons between two regions of an NPN junction, otherwise known as the emitter and collector. When a small current is applied to the base of the transistor, the electrons in the emitter are attracted to the collector. This will cause a larger current to flow from the collector to the emitter. This larger current is then amplified and sent to the load.

The current amplification factor of the 2N6725 is determined by its beta, which is the ratio of collector to base current. Its typical beta is typically about 100, which can range from 20 to 500 depending on the operating conditions. The gain of the transistor is affected by the temperature and base current, and can therefore be adjusted by changing either of these parameters.

The 2N6725 also has a low saturation voltage, which is the voltage that is necessary to switch the device off. The power supply voltage of the device usually needs to be higher than this value in order to ensure that it is turning on correctly. This can be conveniently adjusted by setting the emitter resistor value.

The maximum collector-emitter voltage of the 2N6725 is 350V, making it ideal for power supply circuits. Additionally, its maximum power dissipation is 500mW, giving it enough power to handle most applications.

Overall, the 2N6725 is a versatile transistor that is suitable for many applications. It has a wide range of current handling, a high current gain and a low saturation voltage, making it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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