Allicdata Part #: | 2SK208-Y(TE85LF)TR-ND |
Manufacturer Part#: |
2SK208-Y(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 50V S-MINI |
More Detail: | JFET N-Channel 100mW Surface Mount S-Mini |
DataSheet: | 2SK208-Y(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0): | 1.2mA @ 10V |
Voltage - Cutoff (VGS off) @ Id: | 400mV @ 100nA |
Input Capacitance (Ciss) (Max) @ Vds: | 8.2pF @ 10V |
Power - Max: | 100mW |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | S-Mini |
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2SK208-Y(TE85L,F)application field and working principle
The 2SK208-Y(TE85L,F) is a type of JFET (Junction Field Effect Transistor). JFETs are a type of transistor that works through the application of a voltage to control a current. These devices are unique because they can switch between two different states - on and off.
The 2SK208-Y(TE85L,F) is used in a variety of applications, such as in low-noise amplifiers, switching and modulator circuits, and in applications where high input impedance is required. The device is capable of handling high temperatures, and has a relatively low drain-source capacitance, making it ideal for high-frequency applications.
JFETs are three-terminal transistors, consisting of a source, a drain and a gate. The gate is the control terminal, where a voltage is applied to control the current flowing between the source and the drain. When a voltage is applied to the gate, it forms a conducting path, also known as a channel, between the source and the drain.
The 2SK208-Y(TE85L,F) is a N-channel junction field-effect transistor that operates by creating a channel between the source and the drain. The application of a positive voltage to the gate creates a conducting channel and allows current to flow from the source to the drain. By adjusting the voltage at the gate, it is possible to control the amount of current flowing through the device. The lower the voltage is at the gate, the lower the amount of current that will flow through the device.
The 2SK208-Y(TE85L,F) has many advantages over traditional transistors, such as low power consumption, high switching speeds, low operating temperatures, and low noise levels. Additionally, the device has a relatively low drain-source capacitance, making it suitable for high-frequency applications. The device is also able to handle high temperatures, making it ideal for use in high-temperature environments.
Overall, the 2SK208-Y(TE85L,F) is an excellent choice for those looking for a high-performance and reliable transistor. The device is versatile and can be used in a variety of applications, from low-noise amplifiers to switching and modulator circuits. The device is capable of handling high temperatures and has a relatively low drain-source capacitance, making it ideal for high-frequency applications. With its great features, the 2SK208-Y(TE85L,F) is a great choice for those looking for a reliable and high-performance transistor.
The specific data is subject to PDF, and the above content is for reference
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